Fabrication of NbN thin films by reactive sputtering

Win Naing Maung, Donald P. Butler, Cheng-Liang Huang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We have fabricated NbN thin films by reactive rf magnetron sputtering. Critical temperatures above 15 K have been achieved by carefully monitoring the deposition parameters of total chamber pressure, rate of Ar and N2 injection, partial pressures of Ar and N2 in the chamber and deposition rate. We found the deposition rate and partial pressure ratios of Ar:N2 to be the key parameters in reliably obtaining high critical temperature thin films. The critical temperature dependence upon total chamber pressure was found to be in general agreement with the scaling law. High quality NbN thin film microstructures were obtained by plasma etching without the degradation of the superconducting properties of the film.

Original languageEnglish
Pages (from-to)615-620
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume11
Issue number3
DOIs
Publication statusPublished - 1993 Jan 1

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Reactive sputtering
critical temperature
pressure chambers
sputtering
Deposition rates
Fabrication
Thin films
Partial pressure
fabrication
partial pressure
thin films
pressure ratio
Plasma etching
Scaling laws
plasma etching
Magnetron sputtering
scaling laws
Temperature
magnetron sputtering
chambers

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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Fabrication of NbN thin films by reactive sputtering. / Maung, Win Naing; Butler, Donald P.; Huang, Cheng-Liang.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 11, No. 3, 01.01.1993, p. 615-620.

Research output: Contribution to journalArticle

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