P-type ZnO films fabricated using the diffusion method with arsenic (As)-implanted silicon substrates as the source of dopants are investigated. The diffusion method is not restricted by the substrate and various dopants can be used in the implantation process. We demonstrate that stable p-type conduction appears at a proper substrate temperature (TS). The best crystallinity and electrical properties of the p-type ZnO films were obtained at TS = 400°C. The maximum carrier concentration of the As dopant was 6.7 ~ 1018 cm-3 and the resistivity reached 1.1×10-1 ω-cm. The reproducible As-doped ZnO films can be obtained by this diffusion method.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials