Fabrication of PZT thick film on platinum-coated silicon substrate by an improved sol-gel deposition method

Chun I. Lin, Yung-Chun Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This article has proposed the fabrication of thick films of lead zirconate titanate (PZT) on a Pt/Ti/SiO2/Si substrate using an improved sol-gel method. To achieve thicker PZT films within reasonable working time, this paper adopts sol-gel coating method but using PZT slurry which contains well dispersed and ball-milled sub-micrometer PZT powders in a sol-gel precursor solution. The PZT slurry is then spin-coated onto a substrate followed by pyrolysis thermal treatments. To enhancing the PZT film qualities, an improved vacuum infiltration treatment has been implemented in addition to conventional sol-gel coating and thermal processing. With the above-mentioned improvements, thicker PZT films with excellent characteristics are obtained. Microstructure and cross-section have been characterized by means of scanning electron microscopy (SEM). The ferroelectric property has been also determined by the ferroelectric analyzer. Films with a thickness in the range from 2.4 m to 12.8 μm can be obtained within hours by the improved sol-gel method. When the thickness of the film is 12.8 μm, the maximum remanent polarization is 24.48 μC/cm2 and the coercive field is 122.72 kV/cm at the maximum electric field, 625kV/cm. These PZT films are ready for device applications.

Original languageEnglish
Title of host publicationNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Pages567-570
Number of pages4
DOIs
Publication statusPublished - 2011 Oct 4
Event6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
Duration: 2011 Feb 202011 Feb 23

Publication series

NameNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Other

Other6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
CountryTaiwan
CityKaohsiung
Period11-02-2011-02-23

Fingerprint

thick films
platinum
gels
fabrication
silicon
infiltration
pyrolysis
coating
balls
micrometers
analyzers
coatings
vacuum
microstructure
scanning electron microscopy
electric fields
cross sections
polarization

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Lin, C. I., & Lee, Y-C. (2011). Fabrication of PZT thick film on platinum-coated silicon substrate by an improved sol-gel deposition method. In NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (pp. 567-570). [6017419] (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems). https://doi.org/10.1109/NEMS.2011.6017419
Lin, Chun I. ; Lee, Yung-Chun. / Fabrication of PZT thick film on platinum-coated silicon substrate by an improved sol-gel deposition method. NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. pp. 567-570 (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems).
@inproceedings{ff9bd6b20181475488657ecdf9190ad0,
title = "Fabrication of PZT thick film on platinum-coated silicon substrate by an improved sol-gel deposition method",
abstract = "This article has proposed the fabrication of thick films of lead zirconate titanate (PZT) on a Pt/Ti/SiO2/Si substrate using an improved sol-gel method. To achieve thicker PZT films within reasonable working time, this paper adopts sol-gel coating method but using PZT slurry which contains well dispersed and ball-milled sub-micrometer PZT powders in a sol-gel precursor solution. The PZT slurry is then spin-coated onto a substrate followed by pyrolysis thermal treatments. To enhancing the PZT film qualities, an improved vacuum infiltration treatment has been implemented in addition to conventional sol-gel coating and thermal processing. With the above-mentioned improvements, thicker PZT films with excellent characteristics are obtained. Microstructure and cross-section have been characterized by means of scanning electron microscopy (SEM). The ferroelectric property has been also determined by the ferroelectric analyzer. Films with a thickness in the range from 2.4 m to 12.8 μm can be obtained within hours by the improved sol-gel method. When the thickness of the film is 12.8 μm, the maximum remanent polarization is 24.48 μC/cm2 and the coercive field is 122.72 kV/cm at the maximum electric field, 625kV/cm. These PZT films are ready for device applications.",
author = "Lin, {Chun I.} and Yung-Chun Lee",
year = "2011",
month = "10",
day = "4",
doi = "10.1109/NEMS.2011.6017419",
language = "English",
isbn = "9781612847757",
series = "NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems",
pages = "567--570",
booktitle = "NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems",

}

Lin, CI & Lee, Y-C 2011, Fabrication of PZT thick film on platinum-coated silicon substrate by an improved sol-gel deposition method. in NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems., 6017419, NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, pp. 567-570, 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011, Kaohsiung, Taiwan, 11-02-20. https://doi.org/10.1109/NEMS.2011.6017419

Fabrication of PZT thick film on platinum-coated silicon substrate by an improved sol-gel deposition method. / Lin, Chun I.; Lee, Yung-Chun.

NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. p. 567-570 6017419 (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Fabrication of PZT thick film on platinum-coated silicon substrate by an improved sol-gel deposition method

AU - Lin, Chun I.

AU - Lee, Yung-Chun

PY - 2011/10/4

Y1 - 2011/10/4

N2 - This article has proposed the fabrication of thick films of lead zirconate titanate (PZT) on a Pt/Ti/SiO2/Si substrate using an improved sol-gel method. To achieve thicker PZT films within reasonable working time, this paper adopts sol-gel coating method but using PZT slurry which contains well dispersed and ball-milled sub-micrometer PZT powders in a sol-gel precursor solution. The PZT slurry is then spin-coated onto a substrate followed by pyrolysis thermal treatments. To enhancing the PZT film qualities, an improved vacuum infiltration treatment has been implemented in addition to conventional sol-gel coating and thermal processing. With the above-mentioned improvements, thicker PZT films with excellent characteristics are obtained. Microstructure and cross-section have been characterized by means of scanning electron microscopy (SEM). The ferroelectric property has been also determined by the ferroelectric analyzer. Films with a thickness in the range from 2.4 m to 12.8 μm can be obtained within hours by the improved sol-gel method. When the thickness of the film is 12.8 μm, the maximum remanent polarization is 24.48 μC/cm2 and the coercive field is 122.72 kV/cm at the maximum electric field, 625kV/cm. These PZT films are ready for device applications.

AB - This article has proposed the fabrication of thick films of lead zirconate titanate (PZT) on a Pt/Ti/SiO2/Si substrate using an improved sol-gel method. To achieve thicker PZT films within reasonable working time, this paper adopts sol-gel coating method but using PZT slurry which contains well dispersed and ball-milled sub-micrometer PZT powders in a sol-gel precursor solution. The PZT slurry is then spin-coated onto a substrate followed by pyrolysis thermal treatments. To enhancing the PZT film qualities, an improved vacuum infiltration treatment has been implemented in addition to conventional sol-gel coating and thermal processing. With the above-mentioned improvements, thicker PZT films with excellent characteristics are obtained. Microstructure and cross-section have been characterized by means of scanning electron microscopy (SEM). The ferroelectric property has been also determined by the ferroelectric analyzer. Films with a thickness in the range from 2.4 m to 12.8 μm can be obtained within hours by the improved sol-gel method. When the thickness of the film is 12.8 μm, the maximum remanent polarization is 24.48 μC/cm2 and the coercive field is 122.72 kV/cm at the maximum electric field, 625kV/cm. These PZT films are ready for device applications.

UR - http://www.scopus.com/inward/record.url?scp=80053308091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053308091&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2011.6017419

DO - 10.1109/NEMS.2011.6017419

M3 - Conference contribution

SN - 9781612847757

T3 - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

SP - 567

EP - 570

BT - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

ER -

Lin CI, Lee Y-C. Fabrication of PZT thick film on platinum-coated silicon substrate by an improved sol-gel deposition method. In NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. p. 567-570. 6017419. (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems). https://doi.org/10.1109/NEMS.2011.6017419