Fabrication of simple GaAs solar cell by Zn diffusion method

Sheng Po Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier.

Original languageEnglish
Title of host publicationAdvances in Applied Materials and Electronics Engineering II
Pages312-316
Number of pages5
DOIs
Publication statusPublished - 2013
Event2nd International Conference on Applied Materials and Electronics Engineering, AMEE 2013 - Hong Kong, China
Duration: 2013 Apr 192013 Apr 20

Publication series

NameAdvanced Materials Research
Volume684
ISSN (Print)1022-6680

Other

Other2nd International Conference on Applied Materials and Electronics Engineering, AMEE 2013
CountryChina
CityHong Kong
Period13-04-1913-04-20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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