Fabrication of sub-quarter-micron grating patterns by employing DUV holographic lithography

L. A. Wang, Chun-Hung Lin, J. H. Chen

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Sub-quarter-micron grating patterns with period as fine as 0.22 μm have been obtained by combining DUV holographic lithography and silylation technique for the first time. A traditional chemical amplified resist (JSR KRF/K2G) originally working for single layer process at 248 nm wavelength was used for silylation. The silylation selectivity was improved by process control and a photoresist pattern with an aspect ration of 4 was obtained.

Original languageEnglish
Pages (from-to)173-177
Number of pages5
JournalMicroelectronic Engineering
Volume46
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven
Duration: 1998 Sep 221998 Sep 24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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