Fabrication of Thin Film Vanadium Oxide for Microbolometer

Chen Kuei Chung, Luh Huew Wu, Tzong Sheng Lee

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

One important issue for microbolometer fabrication is how to get high temperature coefficient of resistance (TCR) sensing material together with IC compatible process. Thin film vanadium pentoxide,V2O5 , with very high negative TCR up to -2.4% has been achieved by d.c. reactive sputtering at unheated substrates as well as low temperature annealing of 400 °C. It realizes the fabrication feasibility of microbolometer of V2O5 sensors after CMOS process. This is quite different from the conventional process by ion sputtering at heated substrates up to 400 °C, or high temperature annealing more than 500 °C to get the vanadium oxides. The properties of vanadium oxides are dependent on the process condition and their crystalline phases. The properties were studied as function of the oxygen content in the sputtering atmosphere and annealing temperature. X-ray diffraction is used to identify their phases.

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalInternational Journal of Nonlinear Sciences and Numerical Simulation
Volume3
Issue number3-4
DOIs
Publication statusPublished - 2002

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Computational Mechanics
  • Modelling and Simulation
  • Engineering (miscellaneous)
  • Mechanics of Materials
  • Physics and Astronomy(all)
  • Applied Mathematics

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