Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide

H. C. Chuang, J. Sanchez, A. H. Liao, C. C. Shen, Chih-Chung Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study we have performed complete filling of through-silicon vias (TSVs) by supercritical carbon dioxide (sc-CO2)-enabled Cu electroplating process for applications in 3D ICs. The sc-CO2 technique makes use of the special features of supercritical fluids, which combine benefits of different states of matter. The effects of different supercritical pressure and current density parameters were investigated, discussed, and the results were compared to traditional electroplating method containing additives, a common practice in PCB industry. Results showed that the best quality structure for this study was achieved at 2000 psi and 3 A/dm2, which could withstand a current of 10 A before burnout, without the addition of any additives or surfactants and a relatively short electroplating time of 3 hours was also found.

Original languageEnglish
Title of host publication2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages464-467
Number of pages4
ISBN (Electronic)9781479989553
DOIs
Publication statusPublished - 2015 Aug 5
Event18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 - Anchorage, United States
Duration: 2015 Jun 212015 Jun 25

Publication series

Name2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015

Other

Other18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
CountryUnited States
CityAnchorage
Period15-06-2115-06-25

Fingerprint

electroplating
Electroplating
carbon dioxide
Carbon dioxide
Electrolytes
electrolytes
Copper
Fabrication
copper
Silicon
fabrication
silicon
supercritical pressures
burnout
polychlorinated biphenyls
Supercritical fluids
supercritical fluids
Polychlorinated biphenyls
Surface active agents
Current density

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Chuang, H. C., Sanchez, J., Liao, A. H., Shen, C. C., & Huang, C-C. (2015). Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide. In 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 (pp. 464-467). [7180961] (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2015.7180961
Chuang, H. C. ; Sanchez, J. ; Liao, A. H. ; Shen, C. C. ; Huang, Chih-Chung. / Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide. 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 464-467 (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015).
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abstract = "In this study we have performed complete filling of through-silicon vias (TSVs) by supercritical carbon dioxide (sc-CO2)-enabled Cu electroplating process for applications in 3D ICs. The sc-CO2 technique makes use of the special features of supercritical fluids, which combine benefits of different states of matter. The effects of different supercritical pressure and current density parameters were investigated, discussed, and the results were compared to traditional electroplating method containing additives, a common practice in PCB industry. Results showed that the best quality structure for this study was achieved at 2000 psi and 3 A/dm2, which could withstand a current of 10 A before burnout, without the addition of any additives or surfactants and a relatively short electroplating time of 3 hours was also found.",
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Chuang, HC, Sanchez, J, Liao, AH, Shen, CC & Huang, C-C 2015, Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide. in 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015., 7180961, 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015, Institute of Electrical and Electronics Engineers Inc., pp. 464-467, 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015, Anchorage, United States, 15-06-21. https://doi.org/10.1109/TRANSDUCERS.2015.7180961

Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide. / Chuang, H. C.; Sanchez, J.; Liao, A. H.; Shen, C. C.; Huang, Chih-Chung.

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 464-467 7180961 (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide

AU - Chuang, H. C.

AU - Sanchez, J.

AU - Liao, A. H.

AU - Shen, C. C.

AU - Huang, Chih-Chung

PY - 2015/8/5

Y1 - 2015/8/5

N2 - In this study we have performed complete filling of through-silicon vias (TSVs) by supercritical carbon dioxide (sc-CO2)-enabled Cu electroplating process for applications in 3D ICs. The sc-CO2 technique makes use of the special features of supercritical fluids, which combine benefits of different states of matter. The effects of different supercritical pressure and current density parameters were investigated, discussed, and the results were compared to traditional electroplating method containing additives, a common practice in PCB industry. Results showed that the best quality structure for this study was achieved at 2000 psi and 3 A/dm2, which could withstand a current of 10 A before burnout, without the addition of any additives or surfactants and a relatively short electroplating time of 3 hours was also found.

AB - In this study we have performed complete filling of through-silicon vias (TSVs) by supercritical carbon dioxide (sc-CO2)-enabled Cu electroplating process for applications in 3D ICs. The sc-CO2 technique makes use of the special features of supercritical fluids, which combine benefits of different states of matter. The effects of different supercritical pressure and current density parameters were investigated, discussed, and the results were compared to traditional electroplating method containing additives, a common practice in PCB industry. Results showed that the best quality structure for this study was achieved at 2000 psi and 3 A/dm2, which could withstand a current of 10 A before burnout, without the addition of any additives or surfactants and a relatively short electroplating time of 3 hours was also found.

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M3 - Conference contribution

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PB - Institute of Electrical and Electronics Engineers Inc.

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Chuang HC, Sanchez J, Liao AH, Shen CC, Huang C-C. Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide. In 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 464-467. 7180961. (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015). https://doi.org/10.1109/TRANSDUCERS.2015.7180961