@inproceedings{b7dfd5c7398243c7823248467ce60e61,
title = "Fabrication of through-silicon vias (TSV) by nickel electroplating in supercritical CO2",
abstract = "3D integrated circuit (IC) structure could provide larger patterning areas by stacking the multi-planar chips, in which the electrical signals can be vertically conducted via through-silicon vias (TSVs). Thus, its advantages are lowered costs and reduced packaging space, size and weight. In this study, the TSVs are fabricated and characterized. Four through holes with a diameter of 70 μm on a silicon wafer are filled by nickel electroplating in supercritical CO2. The chip is cut for observation and examination of the cross-sectional view of the TSVs. The average electrical resistance across the TSVs was measured 0.01Ω. Then the fabricated TSVs can be applied a maximum current of 10 Amps continuously without burnout.",
author = "Chuang, {Ho Chiao} and Lai, {Wei Hong} and Huang, {Chih Chung} and Liao, {Ai Ho} and Yeh, {Chih Kuang}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 ; Conference date: 13-04-2014 Through 16-04-2014",
year = "2014",
month = sep,
day = "23",
doi = "10.1109/NEMS.2014.6908770",
language = "English",
series = "9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "108--112",
booktitle = "9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014",
address = "United States",
}