Fabrication of through-silicon vias (TSV) by nickel electroplating in supercritical CO2

Ho Chiao Chuang, Wei Hong Lai, Chih Chung Huang, Ai Ho Liao, Chih Kuang Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

3D integrated circuit (IC) structure could provide larger patterning areas by stacking the multi-planar chips, in which the electrical signals can be vertically conducted via through-silicon vias (TSVs). Thus, its advantages are lowered costs and reduced packaging space, size and weight. In this study, the TSVs are fabricated and characterized. Four through holes with a diameter of 70 μm on a silicon wafer are filled by nickel electroplating in supercritical CO2. The chip is cut for observation and examination of the cross-sectional view of the TSVs. The average electrical resistance across the TSVs was measured 0.01Ω. Then the fabricated TSVs can be applied a maximum current of 10 Amps continuously without burnout.

Original languageEnglish
Title of host publication9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages108-112
Number of pages5
ISBN (Electronic)9781479947270
DOIs
Publication statusPublished - 2014 Sep 23
Event9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States
Duration: 2014 Apr 132014 Apr 16

Publication series

Name9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Other

Other9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Country/TerritoryUnited States
CityWaikiki Beach
Period14-04-1314-04-16

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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