Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

Shu Yi Tsai, Min Hsiung Hon, Yang Ming Lu

Research output: Contribution to journalArticle

94 Citations (Scopus)

Abstract

An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10-8 A/cm2 for the p-NiO/n-ZnO heterojunction device.

Original languageEnglish
Pages (from-to)37-41
Number of pages5
JournalSolid-State Electronics
Volume63
Issue number1
DOIs
Publication statusPublished - 2011 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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