Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

Shu Yi Tsai; Min Hsiung Hon; Yang Ming Lu

doi:10.1016/j.sse.2011.04.019

Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

Shu Yi Tsai, Min Hsiung Hon, Yang Ming Lu

Hierarchical Green-Energy Materials Research Center

Research output: Contribution to journal › Article › peer-review

128 Citations (Scopus)

Abstract

An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10^-8 A/cm² for the p-NiO/n-ZnO heterojunction device.

Original language	English
Pages (from-to)	37-41
Number of pages	5
Journal	Solid-State Electronics
Volume	63
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.04.019
Publication status	Published - 2011 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2011.04.019

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@article{0be8d22e4b734c4bb993654c74ad8d68,

title = "Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors",

abstract = "An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10-8 A/cm2 for the p-NiO/n-ZnO heterojunction device.",

author = "Tsai, {Shu Yi} and Hon, {Min Hsiung} and Lu, {Yang Ming}",

note = "Funding Information: The authors are grateful to National Science Council in Taiwan for financially supporting this research Grant Nos. 98-2221-E-006-075-MY3 and 96-2221-E-006-119-MY3.",

year = "2011",

month = sep,

doi = "10.1016/j.sse.2011.04.019",

language = "English",

volume = "63",

pages = "37--41",

journal = "Solid-State Electronics",

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AU - Tsai, Shu Yi

AU - Hon, Min Hsiung

AU - Lu, Yang Ming

N1 - Funding Information: The authors are grateful to National Science Council in Taiwan for financially supporting this research Grant Nos. 98-2221-E-006-075-MY3 and 96-2221-E-006-119-MY3.

PY - 2011/9

Y1 - 2011/9

N2 - An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10-8 A/cm2 for the p-NiO/n-ZnO heterojunction device.

AB - An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10-8 A/cm2 for the p-NiO/n-ZnO heterojunction device.

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Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

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