Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

Shu Yi Tsai; Min Hsiung Hon; Yang Ming Lu

doi:10.1016/j.sse.2011.04.019

Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

Shu Yi Tsai
, Min Hsiung Hon
, Yang Ming Lu

Hierarchical Green-Energy Materials Research Center

Research output: Contribution to journal › Article › peer-review

135 Citations (Scopus)

Abstract

An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10^-8 A/cm² for the p-NiO/n-ZnO heterojunction device.

Original language	English
Pages (from-to)	37-41
Number of pages	5
Journal	Solid-State Electronics
Volume	63
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.04.019
Publication status	Published - 2011 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2011.04.019

Cite this

@article{0be8d22e4b734c4bb993654c74ad8d68,

title = "Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors",

abstract = "An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80\% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10-8 A/cm2 for the p-NiO/n-ZnO heterojunction device.",

author = "Tsai, \{Shu Yi\} and Hon, \{Min Hsiung\} and Lu, \{Yang Ming\}",

note = "Funding Information: The authors are grateful to National Science Council in Taiwan for financially supporting this research Grant Nos. 98-2221-E-006-075-MY3 and 96-2221-E-006-119-MY3.",

year = "2011",

month = sep,

doi = "10.1016/j.sse.2011.04.019",

language = "English",

volume = "63",

pages = "37--41",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

AU - Tsai, Shu Yi

AU - Hon, Min Hsiung

AU - Lu, Yang Ming

N1 - Funding Information: The authors are grateful to National Science Council in Taiwan for financially supporting this research Grant Nos. 98-2221-E-006-075-MY3 and 96-2221-E-006-119-MY3.

PY - 2011/9

Y1 - 2011/9

N2 - An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10-8 A/cm2 for the p-NiO/n-ZnO heterojunction device.

AB - An optically transparent p-n heterojunction device consisting of p-NiO and n-ZnO thin films was fabricated by r.f. sputtering method. The structural and optical properties of the p-NiO/n-ZnO heterojunction were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and J-V photocurrent measurements. The XRD shows that ZnO films are highly crystalline in nature with preferred orientation along the (0 0 0 2) direction. The p-NiO/n-ZnO heterojunction device has an average transmittance of over 80% in the visible region. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in a dark environment. The lowest leakage current is 6.64 × 10-8 A/cm2 for the p-NiO/n-ZnO heterojunction device.

UR - https://www.scopus.com/pages/publications/80051788901

UR - https://www.scopus.com/pages/publications/80051788901#tab=citedBy

U2 - 10.1016/j.sse.2011.04.019

DO - 10.1016/j.sse.2011.04.019

M3 - Article

AN - SCOPUS:80051788901

SN - 0038-1101

VL - 63

SP - 37

EP - 41

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this