Fabrication of very high quantum efficiency planar InGaAs PIN photodiodes through prebake process

S. H. Chang, Y. K. Fang, S. F. Ting, S. F. Chen, Yu-Cheng Lin, C. S. Lin, C. Y. Wu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The fabrication is reported of large-area (73 μm in diameter) front-illuminated planar InGaAs PIN photodiodes on S-doped InP substrates through the prebake process and investigations are made of various Zn diffusion times on a 2.9-μm thick absorption layer. As a result of the best tuning of the Zn diffusion time, the large-area planar InGaAs PIN photodiodes achieve a lowest capacitance of 0.43 pF, a lowest dark current of 39 pA, a highest responsivity of 0.99 A/W (79% quantum efficiency) at λ = 1.55 μm, and a highest 3-dB bandwidth of 6.98 GHz for a bare chip and 4.53 GHz for the device packaged in a TO can, respectively. Furthermore, the developed PIN photodiodes possess high breakdown voltage (less than -25V) and provide the P and N electrodes located at different sides of the photodiodes, thus improving the devices for easy bonding and packaging.

Original languageEnglish
Pages (from-to)637-640
Number of pages4
JournalIEE Proceedings: Circuits, Devices and Systems
Volume152
Issue number6
DOIs
Publication statusPublished - 2005 Dec 1
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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