REBa2Cu3O7-δ (RE = rare earth, REBCO) thick films with Tcs of 91 K and Jcs over 1 MA/cm2 have successfully been grown on single crystal substrates by liquid phase epitaxy (LPE), with a fast growth rate of 1 μm/min. However, the growth of REBCO thick films on metallic substrate is much more difficult. There is an urgent need to find a suitable metallic substrate and its buffer layers, which can meet the special conditions of the LPE growth. We have developed a new buffer, Nd2CuO4, on surface oxidised Ni tape by a number of liquid-phase processing methods. The Nd2CuO4 buffer layers grown from liquid phase had excellent biaxial texture and a good surface smoothness suitable for subsequent REBCO growth. LPE growth of YBCO on such Nd2CuO4/NiO/Ni substrates showed that dense nucleation of YBCO on Nd2CuO4 was possible without any REBCO seed layer and there was little reaction between the Nd2CuO4 buffer and the high-temperature CuO:BaO solution.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering