Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering

Cheng-Liang Huang, Cheng Shing Hsu

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

Original languageEnglish
Pages (from-to)2327-2332
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number5
Publication statusPublished - 2000 Sep 1
Event47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA
Duration: 2000 Oct 22000 Oct 6

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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