Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering

Cheng-Liang Huang, Cheng Shing Hsu

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

Original languageEnglish
Pages (from-to)2327-2332
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number5
DOIs
Publication statusPublished - 2000 Sep 1
Event47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA
Duration: 2000 Oct 22000 Oct 6

Fingerprint

Magnetron sputtering
radio frequencies
magnetron sputtering
Silicon
Fabrication
Thin films
fabrication
thin films
Zinc Oxide
Tin
Argon
Titanium oxides
silicon
Substrates
Zinc oxide
Zirconium
titanium oxides
zinc oxides
Sputtering
tin

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.",
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Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering. / Huang, Cheng-Liang; Hsu, Cheng Shing.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 18, No. 5, 01.09.2000, p. 2327-2332.

Research output: Contribution to journalConference article

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AB - Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

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