Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering

Cheng Liang Huang; Cheng Shing Hsu

doi:10.1116/1.1286143

Fabrication of ZnO-doped Zr_0.8Sn_0.2TiO₄ thin films by radio frequency magnetron sputtering

Cheng Liang Huang, Cheng Shing Hsu

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)_0.8 tin (Sn)_0.2 titanium oxide (TiO₄) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

Original language	English
Pages (from-to)	2327-2332
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1286143
Publication status	Published - 2000 Sept
Event	47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA Duration: 2000 Oct 2 → 2000 Oct 6

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1286143

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title = "Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering",

abstract = "Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.",

author = "Huang, {Cheng Liang} and Hsu, {Cheng Shing}",

year = "2000",

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issn = "0734-2101",

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T1 - Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering

AU - Huang, Cheng Liang

AU - Hsu, Cheng Shing

PY - 2000/9

Y1 - 2000/9

N2 - Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

AB - Reactive radio frequency magnetron sputtering was used to fabricate the zinc oxide doped zirconium (Zn)0.8 tin (Sn)0.2 titanium oxide (TiO4) (ZST) thin films on n-type silicon substrates. The structure of the thin films on the silicon was also studied. The films were found to exhibit a columnar structure. The thin films quality was found to be influenced by substrate temperature, sputtering time, and argon concentration.

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

T2 - 47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing

Y2 - 2 October 2000 through 6 October 2000

ER -

Fabrication of ZnO-doped Zr_0.8Sn_0.2TiO₄ thin films by radio frequency magnetron sputtering

Abstract

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