TY - JOUR
T1 - Fabrications of hetero-junction schottky diodes by electrodeposition of nano-structured cuinse2 materials using different upper electrodes
AU - Liu, Jing
AU - Liu, Kuo Wei
AU - Houng, Mau Phon
AU - Yang, Cheng Fu
N1 - Funding Information:
Funding: This work was supported by projects under Nos. MOST 108-2221-E-390-005, MOST 108-2622-E-390-002-CC3, and MOST-108-2221-E-006-042. This research was also funded by the Key Science and Technology Project of Fujian Province (grant number 2019H0022) and the Foundation for Young Scientists of Jimei University (grant number ZR2019002).
Publisher Copyright:
© 2020 by the authors.
PY - 2020/3/1
Y1 - 2020/3/1
N2 - In this study, CuInSe2 (CIS) films (CIS-TFs) and nanorods (CIS-NRs) were successfully deposited on Mo/glass and p+-silicon (p+-Si) using an electrodeposition method. Anodic aluminum oxide (AAO) was used as the template when the CIS-NRs were deposited. Pt, indium tin oxide (ITO), and Ag were deposited as the upper electrodes using a sputtering method to form the hetero-junction devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si, respectively. When p+-Si was used as the substrate, Al was deposited on p+-Si to form negative electrodes for the devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, and Ag/CIS-NRs/p+-Si. The current-voltage properties of all the hetero-junction devices were measured and we found that the hetero-junction of ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si devices revealed the properties of Schottky diodes but the hetero-junction device of Pt/CIS-NRs/p+-Si device did not. The reason for the cause of the differences between these hetero-junction devices was investigated for this study.
AB - In this study, CuInSe2 (CIS) films (CIS-TFs) and nanorods (CIS-NRs) were successfully deposited on Mo/glass and p+-silicon (p+-Si) using an electrodeposition method. Anodic aluminum oxide (AAO) was used as the template when the CIS-NRs were deposited. Pt, indium tin oxide (ITO), and Ag were deposited as the upper electrodes using a sputtering method to form the hetero-junction devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si, respectively. When p+-Si was used as the substrate, Al was deposited on p+-Si to form negative electrodes for the devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, and Ag/CIS-NRs/p+-Si. The current-voltage properties of all the hetero-junction devices were measured and we found that the hetero-junction of ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si devices revealed the properties of Schottky diodes but the hetero-junction device of Pt/CIS-NRs/p+-Si device did not. The reason for the cause of the differences between these hetero-junction devices was investigated for this study.
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U2 - 10.3390/coatings10030266
DO - 10.3390/coatings10030266
M3 - Article
AN - SCOPUS:85083043638
SN - 2079-6412
VL - 10
JO - Coatings
JF - Coatings
IS - 3
M1 - 266
ER -