Facet formation in submicron selective growth of Si/SiGe

K. L. Wang, Dawen Wang

Research output: Contribution to journalConference articlepeer-review

Abstract

The paper reviews the work in mostly Si and SiGe epitaxy and some III-V work on patterned substrates. Results of metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), gas source molecular beam epitaxy (GSMBE), and solid source molecular beam epitaxy (MBE) were discussed in the context of facet formation and mass accumulation. A model was shown to explain the facet formation and its evolution in the process, if growth. Further work on surface diffusion and nucleation processes as functions of temperature and other growth parameters will provide needed information for accurate modeling of the facet growth process.

Original languageEnglish
Pages (from-to)241-251
Number of pages11
JournalMaterials Research Society Symposium - Proceedings
Volume448
Publication statusPublished - 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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