Facile synthesis and controlling factors of highly uniform nanostructured MoS2 thin films as buffer layers in gas sensors

Sandeep Reddy Gottam, Chi Ting Tsai, Li Wen Wang, Jun Ting Lin, Chun Cheng Lin, Sheng-Yuan Chu

Research output: Contribution to journalArticle

Abstract

Large-area highly uniform MoS2 thin film deposition by surface modification and solvent miscellany, crystallization and tuneable grain size by annealing and sulfurization facilitates the implementation of MoS2 thin films as buffer layers. MoS2 is a layered material and is not soluble in any solvent and the dispersion will not be uniform which can be solved with our solvent system. To use MoS2 as a buffer layer, many factors are significant in controlling the parameters without affecting the material chemical characteristics. Thermal treatment with modulated sulfurization reforms the grain morphology yielding the flexibility of usage in more applications. MoS2 uniform thin film showed ultra-fast response and recovery rates of approximately 3 and 2.5 s for low concentrations of hydrogen gas and change is sensitivity for a small change in temperature. The uniform scattering with nano-sized grains throughout the film increases the surface area and hence escorts the thin film usage as buffer layers in MISIM structure of memristors. Cost-effective growth, deposition and fabrication techniques is a breakthrough for metal sulfide thin films.

Original languageEnglish
Article number618
JournalApplied Physics A: Materials Science and Processing
Volume125
Issue number9
DOIs
Publication statusPublished - 2019 Sep 1

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Buffer layers
Chemical sensors
Thin films
Memristors
Sulfides
Crystallization
Surface treatment
Hydrogen
Gases
Metals
Heat treatment
Scattering
Annealing
Fabrication
Recovery
Costs
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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abstract = "Large-area highly uniform MoS2 thin film deposition by surface modification and solvent miscellany, crystallization and tuneable grain size by annealing and sulfurization facilitates the implementation of MoS2 thin films as buffer layers. MoS2 is a layered material and is not soluble in any solvent and the dispersion will not be uniform which can be solved with our solvent system. To use MoS2 as a buffer layer, many factors are significant in controlling the parameters without affecting the material chemical characteristics. Thermal treatment with modulated sulfurization reforms the grain morphology yielding the flexibility of usage in more applications. MoS2 uniform thin film showed ultra-fast response and recovery rates of approximately 3 and 2.5 s for low concentrations of hydrogen gas and change is sensitivity for a small change in temperature. The uniform scattering with nano-sized grains throughout the film increases the surface area and hence escorts the thin film usage as buffer layers in MISIM structure of memristors. Cost-effective growth, deposition and fabrication techniques is a breakthrough for metal sulfide thin films.",
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Facile synthesis and controlling factors of highly uniform nanostructured MoS2 thin films as buffer layers in gas sensors. / Gottam, Sandeep Reddy; Tsai, Chi Ting; Wang, Li Wen; Lin, Jun Ting; Lin, Chun Cheng; Chu, Sheng-Yuan.

In: Applied Physics A: Materials Science and Processing, Vol. 125, No. 9, 618, 01.09.2019.

Research output: Contribution to journalArticle

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