Facile synthesis and controlling factors of highly uniform nanostructured MoS₂ thin films as buffer layers in gas sensors

Large-area highly uniform MoS₂ thin film deposition by surface modification and solvent miscellany, crystallization and tuneable grain size by annealing and sulfurization facilitates the implementation of MoS₂ thin films as buffer layers. MoS₂ is a layered material and is not soluble in any solvent and the dispersion will not be uniform which can be solved with our solvent system. To use MoS₂ as a buffer layer, many factors are significant in controlling the parameters without affecting the material chemical characteristics. Thermal treatment with modulated sulfurization reforms the grain morphology yielding the flexibility of usage in more applications. MoS₂ uniform thin film showed ultra-fast response and recovery rates of approximately 3 and 2.5 s for low concentrations of hydrogen gas and change is sensitivity for a small change in temperature. The uniform scattering with nano-sized grains throughout the film increases the surface area and hence escorts the thin film usage as buffer layers in MISIM structure of memristors. Cost-effective growth, deposition and fabrication techniques is a breakthrough for metal sulfide thin films.