Failure analysis of BGA package by a TDR approach

Ming Kun Chen, Cheng Chi Tai, Yu Jung Huang, I. Chih Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

This paper presents failure analysis (FA) of the electrical interconnection of BGA packaging. The TDR (time domain reflectometry) measurement methodology is increasing in importance as a nondestructive method for fault location in BGA packages. Semiconductor manufacturers use TDR as a failure analysis tool because it can quickly perform nondestructive tests on packaged ICs. The measurement waveform of TDR makes it an easy and accuracy method that can assist with fault location in BGA packages. TDR can isolate open and short-circuit defects in the three main regions of an IC: open and short circuit in the copper tracks in the substrate, bond wire, and solder ball. We analyze in detail the TDR impedance as applicable to electronic BGA packaging fault location, focusing on the comparison of TDR measurement and X-ray modeling fault location.

Original languageEnglish
Title of host publicationProceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages112-116
Number of pages5
ISBN (Electronic)078037682X, 9780780376823
DOIs
Publication statusPublished - 2002
Event4th International Symposium on Electronic Materials and Packaging, EMAP 2002 - Kaohsiung, Taiwan
Duration: 2002 Dec 42002 Dec 6

Publication series

NameProceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002

Other

Other4th International Symposium on Electronic Materials and Packaging, EMAP 2002
Country/TerritoryTaiwan
CityKaohsiung
Period02-12-0402-12-06

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • General Materials Science

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