Failure mechanism of electromigration in via sidewall for copper dual damascene interconnection

Y. L. Hsu, Y. K. Fang, Y. T. Chiang, S. F. Chen, Yu-Cheng Lin, T. H. Chou, S. H. Chang

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2 Citations (Scopus)

Abstract

We have studied the effects of step coverage of TaN diffusion barrier layer on Cu electromigration (EM) in detail and found that the EM lifetime strongly depends on the step coverage of via sidewall thickness. We conclude that the EM failures are caused by mechanisms such as unbalanced thermal stress, thermal expansion between Cu and TaN, and surface morphology of TaN including surface roughness and grain sizes. These factors were investigated and evaluated systematically through transmission electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. Furthermore, we also address the enhancement of step coverage to examine Cu EM performance by performing a lifetime experiment, and suggest that the step coverage of TaN barrier becomes an important process integration subject for sub- 0.13 μm and beyond technologies.

Original languageEnglish
Article number064608JES
JournalJournal of the Electrochemical Society
Volume153
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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    Hsu, Y. L., Fang, Y. K., Chiang, Y. T., Chen, S. F., Lin, Y-C., Chou, T. H., & Chang, S. H. (2006). Failure mechanism of electromigration in via sidewall for copper dual damascene interconnection. Journal of the Electrochemical Society, 153(8), [064608JES]. https://doi.org/10.1149/1.2209588