Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors

A. G.U. Perera; W. Z. Shen; W. C. Mallard; M. O. Tanner; K. L. Wang

doi:10.1063/1.119595

Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors

A. G.U. Perera, W. Z. Shen, W. C. Mallard, M. O. Tanner, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region (50-200 μm), where Si homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the measured wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors.

Original language	English
Pages (from-to)	515-517
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	4
DOIs	https://doi.org/10.1063/1.119595
Publication status	Published - 1997 Jul 28

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.119595

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abstract = "We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region (50-200 μm), where Si homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the measured wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors.",

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AU - Perera, A. G.U.

AU - Shen, W. Z.

AU - Mallard, W. C.

AU - Tanner, M. O.

AU - Wang, K. L.

PY - 1997/7/28

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N2 - We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region (50-200 μm), where Si homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the measured wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors.

AB - We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region (50-200 μm), where Si homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the measured wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors.

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Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors

Abstract

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