Fast identification of operating current for toggle MRAM by spiral search

Sheng Hung Wang, Ching Yi Chen, Cheng Wen Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Magnetic Random Access Memory (MRAM) is a non-volatile memory which is widely studied for its high speed, high density, small cell size, and almost unlimited endurance. However, for deep-submicron process technologies, significant variation in MRAM cells' operating regions results in write failures in cells and reduces the production yield. Currently, memory designers characterize failed MRAM chips to find a suitable current level for reconfiguring their operating current, which is timeconsuming. In this paper, we propose an efficient operating current search method and a built-in circuit for toggle MRAM, which can rapidly find a customized operating current for each MRAM chip. With the built-in circuit, an MRAM chip can dynamically reconfigure its operating current automatically. Production yield and product life-time thus can be increased.

Original languageEnglish
Title of host publicationProceedings of the 47th Design Automation Conference, DAC '10
Number of pages6
Publication statusPublished - 2010 Sept 7
Event47th Design Automation Conference, DAC '10 - Anaheim, CA, United States
Duration: 2010 Jun 132010 Jun 18

Publication series

NameProceedings - Design Automation Conference
ISSN (Print)0738-100X


Other47th Design Automation Conference, DAC '10
Country/TerritoryUnited States
CityAnaheim, CA

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Modelling and Simulation


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