TY - GEN
T1 - FEA of thermal warpage in ball grid array with consideration of molding compound residual strain compared to experimental measurements
AU - Lim, Nino Rigo Emil
AU - Dimagiba, Richard
AU - Ubando, Aristotle
AU - Gonzaga, Jeremias
AU - Augusto, Gerardo
N1 - Funding Information:
The first author would like to acknowledge the Engineering Research and Development for Technology (ERDT) consortium and the Department of Science and Technology – Science Education Institute (DOST-SEI) for supporting the author’s academic endeavor in pursuing Masters in Mechanical Engineering degree.
Publisher Copyright:
© 2018 IEEE.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2019/3/12
Y1 - 2019/3/12
N2 - As semiconductor devices continue to advance in terms of having smaller and denser designs, the semiconductor packages, in turn, must keep up with the changes to prevent the semiconductor chips from damages caused by internal and external factors. In this paper, a 3D finite element model was developed based on the dimensions of the actual Ball Grid Array. The material properties applied are derived from a previous study by Tsai, et al in 2008. The model was subjected to the same thermal loadings as the experiment and was compared at each temperature level. A quarter model was made and appropriate constraints were applied to determine the proper thermal warpage calculations. The molding compound residual strain was implemented using the command object feature or the Mechanical ANSYS Parametric Design Language (MAPDL). A mesh independence test was also done to determine at which mesh setting yields a stable warpage calculation. The results from the 3D simulation compared to the experimental measurements and were determined to be reasonably consistent. This validates and verifies the geometry, material properties, and boundary conditions applied to the developed 3D FEM that would be necessary for further Finite Element Analysis (FEA).
AB - As semiconductor devices continue to advance in terms of having smaller and denser designs, the semiconductor packages, in turn, must keep up with the changes to prevent the semiconductor chips from damages caused by internal and external factors. In this paper, a 3D finite element model was developed based on the dimensions of the actual Ball Grid Array. The material properties applied are derived from a previous study by Tsai, et al in 2008. The model was subjected to the same thermal loadings as the experiment and was compared at each temperature level. A quarter model was made and appropriate constraints were applied to determine the proper thermal warpage calculations. The molding compound residual strain was implemented using the command object feature or the Mechanical ANSYS Parametric Design Language (MAPDL). A mesh independence test was also done to determine at which mesh setting yields a stable warpage calculation. The results from the 3D simulation compared to the experimental measurements and were determined to be reasonably consistent. This validates and verifies the geometry, material properties, and boundary conditions applied to the developed 3D FEM that would be necessary for further Finite Element Analysis (FEA).
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U2 - 10.1109/HNICEM.2018.8666377
DO - 10.1109/HNICEM.2018.8666377
M3 - Conference contribution
AN - SCOPUS:85064110134
T3 - 2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment and Management, HNICEM 2018
BT - 2018 IEEE 10th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment and Management, HNICEM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th IEEE International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment and Management, HNICEM 2018
Y2 - 29 November 2018 through 2 December 2018
ER -