Features of the electronic transport of topological semimetal PtSn₄and WTe₂single crystals

PtSn4 and WTe2 single crystals were grown, and the resistivity was studied in the temperature range from 4.2 to 80 K in various magnetic fields up to 10 T in detail. It is suggested that the observed quadratic temperature dependence of the electrical resistivity at low temperatures in zero field can be due to, in addition to electron-electron scattering, the "electron-phonon-surface"interference scattering mechanism. The transition from high effective magnetic fields to weak ones, which is observed in compensated conductors with a closed Fermi surface, was proposed as a possible explanation for the minimum on the temperature dependence of the resistivity of PtSn4 and WTe2 in a magnetic field. The values of the mean free path of current carriers were estimated in these materials.