Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface

Hung Pin Chen, Yu Chieh Wen, Yi Hsin Chen, Cheng Hua Tsai, Kuang Li Lee, Pei Kuen Wei, Jinn Kong Sheu, Chi Kuang Sun

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

By using femtosecond laser-ultrasonic, we demonstrate an approach to study the surface plasmon field optically excited in the interface between metal and a semiconductor thin film. By femtosecond impulsive excitation on gallium-nitride (GaN), different optical probe signals were observed when the impulse-excited nanoacoustic pulse propagated through the metal film and metal nanoslits. By analyzing the shape and temporal response of thus induced acousto-optical signals, our femtosecond laser-ultrasonic study not only reveals the plasmonic field distribution optically excited in the metal/substrate interface but also confirms that the penetration depth of surface plasmon field into the substrate agrees well with a simulation result.

Original languageEnglish
Article number201102
JournalApplied Physics Letters
Volume97
Issue number20
DOIs
Publication statusPublished - 2010 Nov 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface'. Together they form a unique fingerprint.

Cite this