Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface

Hung Pin Chen, Yu Chieh Wen, Yi Hsin Chen, Cheng Hua Tsai, Kuang Li Lee, Pei Kuen Wei, Jinn-Kong Sheu, Chi Kuang Sun

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

By using femtosecond laser-ultrasonic, we demonstrate an approach to study the surface plasmon field optically excited in the interface between metal and a semiconductor thin film. By femtosecond impulsive excitation on gallium-nitride (GaN), different optical probe signals were observed when the impulse-excited nanoacoustic pulse propagated through the metal film and metal nanoslits. By analyzing the shape and temporal response of thus induced acousto-optical signals, our femtosecond laser-ultrasonic study not only reveals the plasmonic field distribution optically excited in the metal/substrate interface but also confirms that the penetration depth of surface plasmon field into the substrate agrees well with a simulation result.

Original languageEnglish
Article number201102
JournalApplied Physics Letters
Volume97
Issue number20
DOIs
Publication statusPublished - 2010 Nov 15

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metal nitrides
gallium nitrides
ultrasonics
metals
lasers
metal films
optical communication
impulses
penetration
probes
thin films
pulses
excitation
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, H. P., Wen, Y. C., Chen, Y. H., Tsai, C. H., Lee, K. L., Wei, P. K., ... Sun, C. K. (2010). Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface. Applied Physics Letters, 97(20), [201102]. https://doi.org/10.1063/1.3503633
Chen, Hung Pin ; Wen, Yu Chieh ; Chen, Yi Hsin ; Tsai, Cheng Hua ; Lee, Kuang Li ; Wei, Pei Kuen ; Sheu, Jinn-Kong ; Sun, Chi Kuang. / Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface. In: Applied Physics Letters. 2010 ; Vol. 97, No. 20.
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Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface. / Chen, Hung Pin; Wen, Yu Chieh; Chen, Yi Hsin; Tsai, Cheng Hua; Lee, Kuang Li; Wei, Pei Kuen; Sheu, Jinn-Kong; Sun, Chi Kuang.

In: Applied Physics Letters, Vol. 97, No. 20, 201102, 15.11.2010.

Research output: Contribution to journalArticle

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AU - Chen, Hung Pin

AU - Wen, Yu Chieh

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AU - Wei, Pei Kuen

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AB - By using femtosecond laser-ultrasonic, we demonstrate an approach to study the surface plasmon field optically excited in the interface between metal and a semiconductor thin film. By femtosecond impulsive excitation on gallium-nitride (GaN), different optical probe signals were observed when the impulse-excited nanoacoustic pulse propagated through the metal film and metal nanoslits. By analyzing the shape and temporal response of thus induced acousto-optical signals, our femtosecond laser-ultrasonic study not only reveals the plasmonic field distribution optically excited in the metal/substrate interface but also confirms that the penetration depth of surface plasmon field into the substrate agrees well with a simulation result.

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