Fermi level depinning of Ge Schottky contacts using single crystalline MgO

Yi Zhoua; Wei Han; Yong Wang; Faxian Xiu; Jin Zou; R. K. Kawakami; K. L. Wang

doi:10.1109/ISDRS.2009.5378328

Fermi level depinning of Ge Schottky contacts using single crystalline MgO

Yi Zhoua, Wei Han, Yong Wang, Faxian Xiu, Jin Zou, R. K. Kawakami, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378328
Publication status	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 2009 Dec 9 → 2009 Dec 11

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	09-12-09 → 09-12-11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2009.5378328

Cite this

@inproceedings{16f14dfaf31b4f2bb969067b3a60b7e8,

title = "Fermi level depinning of Ge Schottky contacts using single crystalline MgO",

author = "Yi Zhoua and Wei Han and Yong Wang and Faxian Xiu and Jin Zou and Kawakami, {R. K.} and Wang, {K. L.}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378328",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Zhoua, Y, Han, W, Wang, Y, Xiu, F, Zou, J, Kawakami, RK & Wang, KL 2009, Fermi level depinning of Ge Schottky contacts using single crystalline MgO. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378328, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09-12-09. https://doi.org/10.1109/ISDRS.2009.5378328

TY - GEN

T1 - Fermi level depinning of Ge Schottky contacts using single crystalline MgO

AU - Zhoua, Yi

AU - Han, Wei

AU - Wang, Yong

AU - Xiu, Faxian

AU - Zou, Jin

AU - Kawakami, R. K.

AU - Wang, K. L.

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?scp=77949530881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949530881&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2009.5378328

DO - 10.1109/ISDRS.2009.5378328

M3 - Conference contribution

AN - SCOPUS:77949530881

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Fermi level depinning of Ge Schottky contacts using single crystalline MgO

Publication series

Other

All Science Journal Classification (ASJC) codes

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