Abstract
Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.
Original language | English |
---|---|
Pages (from-to) | 3357-3364 |
Number of pages | 8 |
Journal | Advanced Materials |
Volume | 25 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2013 Jun 25 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering