Ferroelectric properties and dielectric responses of multiferroic BiFeO3 films grown by RF magnetron sputtering

Xiao-Ding Qi, Po Chou Tsai, Yi-Chun Chen, Cheng Hung Ko, Jung-Chun Huang, In-Gann Chen

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18 Citations (Scopus)

Abstract

Multiferroic BiFeO3 films have been grown on LaNiO 3-x/SrTiO3 and Pt/Si substrates by RF magnetron sputtering. The films showed fully saturated ferroelectric hysteresis loops with large remanent polarization of 64 νC cm-2, suitable for most device applications. Piezoresponse force microscopy confirmed that the films were electrically writable. In addition to the high-frequency intrinsic dielectric loss of epitaxial films, the Argand diagram also revealed low-frequency contributions from both dc conductivity and interfacial polarization at electrodes. For polycrystalline films on Pt/Si, the dominant contribution to dielectric loss was space charge polarization at grain boundaries.

Original languageEnglish
Article number232001
JournalJournal of Physics D: Applied Physics
Volume41
Issue number23
DOIs
Publication statusPublished - 2008 Dec 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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