Multiferroic BiFeO3 films have been grown on LaNiO 3-x/SrTiO3 and Pt/Si substrates by RF magnetron sputtering. The films showed fully saturated ferroelectric hysteresis loops with large remanent polarization of 64 νC cm-2, suitable for most device applications. Piezoresponse force microscopy confirmed that the films were electrically writable. In addition to the high-frequency intrinsic dielectric loss of epitaxial films, the Argand diagram also revealed low-frequency contributions from both dc conductivity and interfacial polarization at electrodes. For polycrystalline films on Pt/Si, the dominant contribution to dielectric loss was space charge polarization at grain boundaries.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films