Ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal-organic decomposition process

Cheng Hsiung Lin; Wen Dung Hsu; I. Nan Lin

doi:10.1016/S0169-4332(98)00680-1

Ferroelectric properties of Pb(Zr_0.52Ti_0.48)O₃ thin films prepared by metal-organic decomposition process

Cheng Hsiung Lin, Wen Dung Hsu, I. Nan Lin

Research output: Contribution to journal › Conference article › peer-review

21 Citations (Scopus)

Abstract

The perovskite LaNiO₃ (LNO) and Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were successfully prepared using metal-organic decomposition (MOD) process. Perovskite LNO phase can be obtained at temperature as low as 600°C (30 s) in rapid thermal annealing (RTA) process. However, additional furnace annealing (FA) at 650°C (60 min) is needed in order to lower the electrical resistivity of the LNO films to ρ ≤ 30 mΩ cm. Pure perovskite PZT films can easily be obtained by either RTA or FA process. Furnace post-annealing process (650°C, 60 min) results in a PZT film possessing significantly better ferroelectric properties than the RTA process (650°C, 60 s). The best properties obtained are remanent polarization P_r = 11.8 μC/cm², coercive force E_c = 76.0 μC/cm² and leakage current density J_L ≤ 3 × 10^-6 A/cm² (for applied field ≤ 200 kV/cm). Using LNO films as buffer layer does not increase the ferroelectric properties of PZT films, but significantly improves fatigue behavior.

Original language	English
Pages (from-to)	418-421
Number of pages	4
Journal	Applied Surface Science
Volume	142
Issue number	1
DOIs	https://doi.org/10.1016/S0169-4332(98)00680-1
Publication status	Published - 1999 Apr
Event	Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 - Copenhagen, Denmark Duration: 1998 Jul 6 → 1998 Jul 10

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(98)00680-1

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@article{5dfb719ee6714d11941e0b6f276a3e8e,

title = "Ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal-organic decomposition process",

abstract = "The perovskite LaNiO3 (LNO) and Pb(Zr0.52Ti0.48)O3 (PZT) thin films were successfully prepared using metal-organic decomposition (MOD) process. Perovskite LNO phase can be obtained at temperature as low as 600°C (30 s) in rapid thermal annealing (RTA) process. However, additional furnace annealing (FA) at 650°C (60 min) is needed in order to lower the electrical resistivity of the LNO films to ρ ≤ 30 mΩ cm. Pure perovskite PZT films can easily be obtained by either RTA or FA process. Furnace post-annealing process (650°C, 60 min) results in a PZT film possessing significantly better ferroelectric properties than the RTA process (650°C, 60 s). The best properties obtained are remanent polarization Pr = 11.8 μC/cm2, coercive force Ec = 76.0 μC/cm2 and leakage current density JL ≤ 3 × 10-6 A/cm2 (for applied field ≤ 200 kV/cm). Using LNO films as buffer layer does not increase the ferroelectric properties of PZT films, but significantly improves fatigue behavior.",

author = "Lin, {Cheng Hsiung} and Hsu, {Wen Dung} and Lin, {I. Nan}",

note = "Funding Information: Financial support from the National Science Council of ROC, through project nos. NSC 87-2113-M-007-037 and NSC 87-2216-E-007-012 is gratefully acknowledged by the authors.; Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 ; Conference date: 06-07-1998 Through 10-07-1998",

year = "1999",

month = apr,

doi = "10.1016/S0169-4332(98)00680-1",

language = "English",

volume = "142",

pages = "418--421",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal-organic decomposition process

AU - Lin, Cheng Hsiung

AU - Hsu, Wen Dung

AU - Lin, I. Nan

N1 - Funding Information: Financial support from the National Science Council of ROC, through project nos. NSC 87-2113-M-007-037 and NSC 87-2216-E-007-012 is gratefully acknowledged by the authors.

PY - 1999/4

Y1 - 1999/4

N2 - The perovskite LaNiO3 (LNO) and Pb(Zr0.52Ti0.48)O3 (PZT) thin films were successfully prepared using metal-organic decomposition (MOD) process. Perovskite LNO phase can be obtained at temperature as low as 600°C (30 s) in rapid thermal annealing (RTA) process. However, additional furnace annealing (FA) at 650°C (60 min) is needed in order to lower the electrical resistivity of the LNO films to ρ ≤ 30 mΩ cm. Pure perovskite PZT films can easily be obtained by either RTA or FA process. Furnace post-annealing process (650°C, 60 min) results in a PZT film possessing significantly better ferroelectric properties than the RTA process (650°C, 60 s). The best properties obtained are remanent polarization Pr = 11.8 μC/cm2, coercive force Ec = 76.0 μC/cm2 and leakage current density JL ≤ 3 × 10-6 A/cm2 (for applied field ≤ 200 kV/cm). Using LNO films as buffer layer does not increase the ferroelectric properties of PZT films, but significantly improves fatigue behavior.

AB - The perovskite LaNiO3 (LNO) and Pb(Zr0.52Ti0.48)O3 (PZT) thin films were successfully prepared using metal-organic decomposition (MOD) process. Perovskite LNO phase can be obtained at temperature as low as 600°C (30 s) in rapid thermal annealing (RTA) process. However, additional furnace annealing (FA) at 650°C (60 min) is needed in order to lower the electrical resistivity of the LNO films to ρ ≤ 30 mΩ cm. Pure perovskite PZT films can easily be obtained by either RTA or FA process. Furnace post-annealing process (650°C, 60 min) results in a PZT film possessing significantly better ferroelectric properties than the RTA process (650°C, 60 s). The best properties obtained are remanent polarization Pr = 11.8 μC/cm2, coercive force Ec = 76.0 μC/cm2 and leakage current density JL ≤ 3 × 10-6 A/cm2 (for applied field ≤ 200 kV/cm). Using LNO films as buffer layer does not increase the ferroelectric properties of PZT films, but significantly improves fatigue behavior.

UR - http://www.scopus.com/inward/record.url?scp=0032628456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032628456&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(98)00680-1

DO - 10.1016/S0169-4332(98)00680-1

M3 - Conference article

AN - SCOPUS:0032628456

SN - 0169-4332

VL - 142

SP - 418

EP - 421

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

T2 - Proceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9

Y2 - 6 July 1998 through 10 July 1998

ER -

Ferroelectric properties of Pb(Zr_0.52Ti_0.48)O₃ thin films prepared by metal-organic decomposition process

Abstract

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