Ferromagnetic Mn5Ge3C0.8 contacts on Ge: Work function and specific contact resistivity

I. A. Fischer, J. Gebauer, E. Rolseth, P. Winkel, L. T. Chang, K. L. Wang, C. Sürgers, J. Schulze

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We report on the study of the electrical and magnetic properties of Mn 5Ge3C0.8 contacts deposited on highly doped n-Ge (1 0 0) as a potentially complementary metal-oxide-semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn 5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal-oxide-semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ω cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

Original languageEnglish
Article number125002
JournalSemiconductor Science and Technology
Issue number12
Publication statusPublished - 2013 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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