FIELD-EFFECT TRANSISTOR WITH A DIELECTRIC LAYER HAVING THEREIN DENATURED ALBUMEN

Tzung-Fang Guo

FIELD-EFFECT TRANSISTOR WITH A DIELECTRIC LAYER HAVING THEREIN DENATURED ALBUMEN

Department of Photonics

Research output: Patent

Abstract

A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.

Translated title of the contribution	卵蛋白介電層應用
Original language	English
Patent number	8618534
Publication status	Published - 2013 May 9

Cite this

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title = "FIELD-EFFECT TRANSISTOR WITH A DIELECTRIC LAYER HAVING THEREIN DENATURED ALBUMEN",

abstract = "A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.",

author = "Tzung-Fang Guo",

year = "2013",

month = may,

day = "9",

language = "English",

type = "Patent",

note = "8618534",

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N2 - A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.

AB - A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.

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