Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

Chih Hung Hsiao, Chien Sheng Huang, Sheng Joue Young, Shoou Jinn Chang, Jia Jyun Guo, Chung Wei Liu, Tsung Ying Yang

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

Original languageEnglish
Article number6514599
Pages (from-to)1905-1910
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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