Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

Chih Hung Hsiao; Chien Sheng Huang; Sheng Joue Young; Shoou Jinn Chang; Jia Jyun Guo; Chung Wei Liu; Tsung Ying Yang

doi:10.1109/TED.2013.2257790

Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

Chih Hung Hsiao
, Chien Sheng Huang
, Sheng Joue Young
, Shoou Jinn Chang
, Jia Jyun Guo
, Chung Wei Liu
, Tsung Ying Yang

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

Original language	English
Article number	6514599
Pages (from-to)	1905-1910
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	6
DOIs	https://doi.org/10.1109/TED.2013.2257790
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2013.2257790

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title = "Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector",

abstract = "In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.",

author = "Hsiao, \{Chih Hung\} and Huang, \{Chien Sheng\} and Young, \{Sheng Joue\} and Chang, \{Shoou Jinn\} and Guo, \{Jia Jyun\} and Liu, \{Chung Wei\} and Yang, \{Tsung Ying\}",

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doi = "10.1109/TED.2013.2257790",

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T1 - Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

AU - Hsiao, Chih Hung

AU - Huang, Chien Sheng

AU - Young, Sheng Joue

AU - Chang, Shoou Jinn

AU - Guo, Jia Jyun

AU - Liu, Chung Wei

AU - Yang, Tsung Ying

PY - 2013

Y1 - 2013

N2 - In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

AB - In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 Vμ m and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector

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