Field-emission and photoelectrical characteristics of zno nanorods photodetectors prepared on flexible substrate

T. P. Chen; S. J. Young; S. J. Chang; C. H. Hsiao; C. S. Huang

doi:10.1149/2.jes037205

Field-emission and photoelectrical characteristics of zno nanorods photodetectors prepared on flexible substrate

T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, C. S. Huang

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Vertical zinc oxide nanorods were synthesized on flexible polyimide (PI) substrate by a low temperature process, aqueous method. The field emission performance of ZnO nanorods can be greatly enhanced by illuminating UV light. It was found that the turn-on electric field can be reduced from 4.3 to 2.0 Vm and it is attributed to generate a large number of electrons by UV illumination. Compared with the conventional ZnO film photodetectors, the ZnO nanorods photodetectors have much higher photocurrent. As a result, it is attributed to high surface-to-volume ratio of nanorods, which provide an efficient light trapping absorption.

Original language	English
Pages (from-to)	J153-J157
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	5
DOIs	https://doi.org/10.1149/2.jes037205
Publication status	Published - 2012 Apr 9

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Field-emission and photoelectrical characteristics of zno nanorods photodetectors prepared on flexible substrate",

abstract = "Vertical zinc oxide nanorods were synthesized on flexible polyimide (PI) substrate by a low temperature process, aqueous method. The field emission performance of ZnO nanorods can be greatly enhanced by illuminating UV light. It was found that the turn-on electric field can be reduced from 4.3 to 2.0 Vm and it is attributed to generate a large number of electrons by UV illumination. Compared with the conventional ZnO film photodetectors, the ZnO nanorods photodetectors have much higher photocurrent. As a result, it is attributed to high surface-to-volume ratio of nanorods, which provide an efficient light trapping absorption.",

author = "Chen, {T. P.} and Young, {S. J.} and Chang, {S. J.} and Hsiao, {C. H.} and Huang, {C. S.}",

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AU - Chen, T. P.

AU - Young, S. J.

AU - Chang, S. J.

AU - Hsiao, C. H.

AU - Huang, C. S.

PY - 2012/4/9

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N2 - Vertical zinc oxide nanorods were synthesized on flexible polyimide (PI) substrate by a low temperature process, aqueous method. The field emission performance of ZnO nanorods can be greatly enhanced by illuminating UV light. It was found that the turn-on electric field can be reduced from 4.3 to 2.0 Vm and it is attributed to generate a large number of electrons by UV illumination. Compared with the conventional ZnO film photodetectors, the ZnO nanorods photodetectors have much higher photocurrent. As a result, it is attributed to high surface-to-volume ratio of nanorods, which provide an efficient light trapping absorption.

AB - Vertical zinc oxide nanorods were synthesized on flexible polyimide (PI) substrate by a low temperature process, aqueous method. The field emission performance of ZnO nanorods can be greatly enhanced by illuminating UV light. It was found that the turn-on electric field can be reduced from 4.3 to 2.0 Vm and it is attributed to generate a large number of electrons by UV illumination. Compared with the conventional ZnO film photodetectors, the ZnO nanorods photodetectors have much higher photocurrent. As a result, it is attributed to high surface-to-volume ratio of nanorods, which provide an efficient light trapping absorption.

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