Field emission from quasi-aligned SiCN nanorods

F. G. Tarntair, C. Y. Wen, L. C. Chen, J. J. Wu, K. H. Chen, P. F. Kuo, S. W. Chang, Y. F. Chen, W. K. Hong, H. C. Cheng

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We report on the preparation and field emission properties of quasi-aligned silicon carbon nitride (SiCN) nanorods. The SiCN nanorods are formed by using a two-stage growth method wherein the first stage involves formation of a buffer layer containing high density of nanocrystals by electron cyclotron resonance plasma enhanced chemical vapor deposition and the second stage involves using microwave plasma enhanced chemical vapor deposition for high growth rate along a preferred orientation. It should be noted that growth of the SiCN nanorods is self-mediated without the addition of any metal catalyst. Scanning electron microscopy shows that the SiCN nanorods are six-side-rod-shaped single crystals of about 1-1.5 μm in length and about 20-50 nm in diameter. Energy dispersive x-ray spectrometry shows that the nanorod contains about 26 at. % of Si, 50 at. % of C, and 24 at. % of N. Characteristic current-voltage measurements indicate a low turn-on field of 10 V/μm. Field emission current density in excess of 4.5mA/cm2 has been observed at 36.7 V/μm. Moreover, SiCN nanorods exhibited rather stable emission current under constant applied voltage.

Original languageEnglish
Pages (from-to)2630-2632
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2000 May 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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