TY - JOUR
T1 - Field emission properties of self-assembled InN nano-structures
T2 - Effect of Ga incorporation
AU - Shih, C. F.
AU - Chen, N. C.
AU - Chang, P. H.
AU - Liu, K. S.
N1 - Funding Information:
The authors would like to thank the National Science Council of the Republic of China for financially supporting this research under Contract No. NSC93-2745-L-182-002. We also appreciate our discussions with Dr. Tai-Yuan Lin at National Taiwan Ocean University and Dr. Chin-An Chang at Chang-Gung University.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/8/1
Y1 - 2005/8/1
N2 - This work reports the field emission properties of InN and In-rich InGaN nano-structures. Pyramid InN with a tip-like feature exhibits field emission characteristics in a vacuum. Adding Ga into InN reduces the surface roughness and degrades the turn-on electric field. However, when the Ga content is as low as 2%, the same roughness of the film is almost maintained and the barrier height is lower than that of InN. Ultraviolet photoemission spectroscopic analyses show a gradual reduction on the surface work function of InGaN films when the Ga content increases. From the perspectives of surface roughness and surface work function, the In0.98Ga0.02N sample has the best field emission properties of all of the samples studied herein. A turn-on field of 11 V/μm and an emission current density of 1×10-2 A/cm2 (at 30 V/μm) in the In0.98Ga0.02N epilayer were achieved.
AB - This work reports the field emission properties of InN and In-rich InGaN nano-structures. Pyramid InN with a tip-like feature exhibits field emission characteristics in a vacuum. Adding Ga into InN reduces the surface roughness and degrades the turn-on electric field. However, when the Ga content is as low as 2%, the same roughness of the film is almost maintained and the barrier height is lower than that of InN. Ultraviolet photoemission spectroscopic analyses show a gradual reduction on the surface work function of InGaN films when the Ga content increases. From the perspectives of surface roughness and surface work function, the In0.98Ga0.02N sample has the best field emission properties of all of the samples studied herein. A turn-on field of 11 V/μm and an emission current density of 1×10-2 A/cm2 (at 30 V/μm) in the In0.98Ga0.02N epilayer were achieved.
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U2 - 10.1016/j.jcrysgro.2005.04.065
DO - 10.1016/j.jcrysgro.2005.04.065
M3 - Article
AN - SCOPUS:22144451158
SN - 0022-0248
VL - 281
SP - 328
EP - 333
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2-4
ER -