Abstract
A thermal evaporation method was used for the deposition of tungsten films. The tungsten source was resistively heated to a temperature between 1810 and 2010 °C for the deposition. The resulting BCC α-tungsten film exhibits a rod-like structure and a highly preferred (2 0 0) orientation. This unique microstructure leads to field emission properties that are not only superior to the other forms of tungsten but also better than most of the other thin film emitters. A low turn-on field of 1.3 V/μm and an extremely high field enhanced factor of 398095 were obtained.
Original language | English |
---|---|
Pages (from-to) | 84-87 |
Number of pages | 4 |
Journal | Chemical Physics Letters |
Volume | 413 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2005 Sept 15 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
- Physical and Theoretical Chemistry