The field induced resistive switching in metal oxide interfaces was analyzed using electric pulses in perovskite oxides. Switching was restricted to the interfacial layer between a deposited metal electrode and the oxide. The characterization using I-V measurement revealed a conducting mechanism dominated by pulse generated crystalline defects. The results show that the switching can be optimized for device applications by modifying the interface.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)