@article{62f8fd19b90a4485bc77a099069b40a4,
title = "Field-induced resistive switching in metal-oxide interfaces",
abstract = "The field induced resistive switching in metal oxide interfaces was analyzed using electric pulses in perovskite oxides. Switching was restricted to the interfacial layer between a deposited metal electrode and the oxide. The characterization using I-V measurement revealed a conducting mechanism dominated by pulse generated crystalline defects. The results show that the switching can be optimized for device applications by modifying the interface.",
author = "S. Tsui and A. Baikalov and J. Cmaidalka and Sun, {Y. Y.} and Wang, {Y. Q.} and Xue, {Y. Y.} and Chu, {C. W.} and L. Chen and Jacobson, {A. J.}",
note = "Funding Information: The work in Houston is supported in part by NSF Grant No. DMR-9804325, the T. L. L. Temple Foundation, the John J. and Rebecca Moores Endowment, the Robert A. Welch Foundation, and the State of Texas through the Texas Center for Superconductivity and Advanced Materials at the University of Houston; and at Lawrence Berkeley Laboratory by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098.",
year = "2004",
month = jul,
day = "12",
doi = "10.1063/1.1768305",
language = "English",
volume = "85",
pages = "317--319",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",
}