Field-induced resistive switching in metal-oxide interfaces

S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, A. J. Jacobson

Research output: Contribution to journalArticlepeer-review

256 Citations (Scopus)


The field induced resistive switching in metal oxide interfaces was analyzed using electric pulses in perovskite oxides. Switching was restricted to the interfacial layer between a deposited metal electrode and the oxide. The characterization using I-V measurement revealed a conducting mechanism dominated by pulse generated crystalline defects. The results show that the switching can be optimized for device applications by modifying the interface.

Original languageEnglish
Pages (from-to)317-319
Number of pages3
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2004 Jul 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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