Filament control of field-enhanced WOx resistive memory toward low power applications

Chao Hung Wang, Kuang Hao Chiang, Yu Hsuan Lin, Jau Yi Wu, Yung Han Ho, Erh Kun Lai, Dai Ying Lee, Ming Hsiu Lee, Kuang Yeu Hsieh, Chih Yuan Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Significant improvements for low power WOx ReRAMs have been achieved through optimizing the oxide quality and managing the sizes and densities of the initial filament. We proposed an operation sequence to evaluate the optimal forming condition which may affect the stability of the following cycling operations. An illustrative model is also provided to explain the correlation of forming current and the filament structure including its dimension and the density of oxygen vacancy.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
Publication statusPublished - 2017 Jun 7
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 2017 Apr 242017 Apr 27

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Country/TerritoryTaiwan
CityHsinchu
Period17-04-2417-04-27

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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