Film thickness dependence on the electrical and optical properties of PtSi/p-Si(1 0 0) Schottky barrier detector

Yen Tang Lyu, Ching Ting Lee, Gwo Ji Horng, Chia Ho, Ching Yuan Lee, Chung Sen Wu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We report the PtSi film thickness dependence on the electrical barrier height and quantum efficiency of PtSi Schottky barrier detector (SBD). The thickness of the PtSi film was varied from 20 to 120Å. The electrical barrier height of the SBD is about 0.186±0.002eV. It was observed that the grain size and the film thickness have negligible effect on the electrical barrier height. However, the quantum efficiency of the SBDs is strongly dependent on the film thickness. When the PtSi thickness is about 80Å, the quantum efficiency exhibits its peak value exceeding 1%. The positive quantum efficiency dependence on the film thickness is referred to the enhancement of elastic phonon scattering and the absorption dependence on the film thickness. When the film thickness is thicker than 80Å, the decrease of the quantum efficiency is deduced from the inelastic scattering, like hole/hole scattering, imperfection scattering and impurity scattering during the hot hole transporting to the PtSi/Si interface.

Original languageEnglish
Pages (from-to)177-181
Number of pages5
JournalMaterials Chemistry and Physics
Volume74
Issue number2
DOIs
Publication statusPublished - 2002 Mar 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Film thickness dependence on the electrical and optical properties of PtSi/p-Si(1 0 0) Schottky barrier detector'. Together they form a unique fingerprint.

Cite this