The performance of a silicon micromachined pressure sensor can be significantly affected by the die-attach material and the mounting configuration of the die in its package. Packaging stresses transmitted to the piezoresistive element implanted in the sensing die can induce an error in the voltage output of the sensor. A finite-element model is developed to analyse the effects of different die-mounting configurations, die-attach materials and sensor-element constraints. The model calculates the temperature-induced stress affecting the piezoresistive element ion-implanted on the surface of the pressure-sensing die. Aluminium nitride produces the minimum offset. The 110 mil glass constraint provides better mechanical isolation from the stresses produced by the thermal mismatch between the silicon/glass component and the substrate.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering