First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure

X. R. Yu, C. C. Hsieh, M. H. Chuang, M. Y. Chiu, T. C. Sun, W. Z. Geng, W. H. Chang, Y. J. Shih, W. H. Lu, W. C. Chang, Y. C. Lin, Y. C. Pai, C. Y. Lai, M. H. Chuang, Y. Dei, C. Y. Yang, H. Y. Lu, N. C. Lin, C. T. Wu, K. H. KaoW. C.Y. Ma, D. D. Lu, Y. J. Lee, G. L. Luo, M. H. Chiang, T. Maeda, W. F. Wu, Y. M. Li, T. H. Hou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents experimental electrical characteristics and circuit prediction at cryogenic temperatures (down to 10 K) for three different kinds of germanium (Ge)-based FETs with advanced Fin/GAA structures. Among them, the layer transferred Ge-on-Insulator (GeOI) FinFET significantly improves its I-V characteristic during cryogenic measurements, such as a steeper subthreshold swing at 10K and a better Ion. The developed GeOI fabrication method provides an effective way to eliminate the defects originating from misfit dislocations at the Ge/Si substrate during epitaxial growth, which would be treated as the key to device performance enhancement under 10 K. According to the measured IV at 10 K and circuit prediction, GeOI FinFETs with high Ge crystallinity are strong candidates for High-Performance-Computing (HPC) applications.

Original languageEnglish
Title of host publication2023 International Electron Devices Meeting, IEDM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350327670
DOIs
Publication statusPublished - 2023
Event2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States
Duration: 2023 Dec 92023 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2023 International Electron Devices Meeting, IEDM 2023
Country/TerritoryUnited States
CitySan Francisco
Period23-12-0923-12-13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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