First demonstration of MSM photodetectors in bulk GaInNAs layers

S. H. Hsu; Y. K. Su; S. J. Chang; R. W. Chuang; W. C. Chen

doi:10.1109/CLEOPR.2005.1569576

First demonstration of MSM photodetectors in bulk GaInNAs layers

S. H. Hsu, Y. K. Su, S. J. Chang, R. W. Chuang, W. C. Chen

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga _0.85In_0.15N_0.011As_0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.

Original language	English
Title of host publication	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
Pages	861-862
Number of pages	2
DOIs	https://doi.org/10.1109/CLEOPR.2005.1569576
Publication status	Published - 2005
Event	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 - Tokyo, Japan Duration: 2005 Jul 11 → 2005 Jul 15

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume	2005

Other

Other	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
Country/Territory	Japan
City	Tokyo
Period	05-07-11 → 05-07-15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/CLEOPR.2005.1569576

Cite this

Hsu, S. H., Su, Y. K., Chang, S. J., Chuang, R. W., & Chen, W. C. (2005). First demonstration of MSM photodetectors in bulk GaInNAs layers. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 (pp. 861-862). Article 1569576 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; Vol. 2005). https://doi.org/10.1109/CLEOPR.2005.1569576

@inproceedings{3ab9bf02241a471c895baeef2737bd20,

title = "First demonstration of MSM photodetectors in bulk GaInNAs layers",

abstract = "Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga 0.85In0.15N0.011As0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.",

author = "Hsu, {S. H.} and Su, {Y. K.} and Chang, {S. J.} and Chuang, {R. W.} and Chen, {W. C.}",

year = "2005",

doi = "10.1109/CLEOPR.2005.1569576",

language = "English",

isbn = "0780392426",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

pages = "861--862",

booktitle = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005",

note = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 ; Conference date: 11-07-2005 Through 15-07-2005",

}

Hsu, SH, Su, YK, Chang, SJ , Chuang, RW & Chen, WC 2005, First demonstration of MSM photodetectors in bulk GaInNAs layers. in Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005., 1569576, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, vol. 2005, pp. 861-862, Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005, Tokyo, Japan, 05-07-11. https://doi.org/10.1109/CLEOPR.2005.1569576

First demonstration of MSM photodetectors in bulk GaInNAs layers. / Hsu, S. H.; Su, Y. K.; Chang, S. J. et al.
Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005. 2005. p. 861-862 1569576 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - First demonstration of MSM photodetectors in bulk GaInNAs layers

AU - Hsu, S. H.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chuang, R. W.

AU - Chen, W. C.

PY - 2005

Y1 - 2005

N2 - Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga 0.85In0.15N0.011As0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.

AB - Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga 0.85In0.15N0.011As0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.

UR - http://www.scopus.com/inward/record.url?scp=33847105485&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847105485&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2005.1569576

DO - 10.1109/CLEOPR.2005.1569576

M3 - Conference contribution

AN - SCOPUS:33847105485

SN - 0780392426

SN - 9780780392427

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

SP - 861

EP - 862

BT - Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005

T2 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005

Y2 - 11 July 2005 through 15 July 2005

ER -

First demonstration of MSM photodetectors in bulk GaInNAs layers

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this