First demonstration of MSM photodetectors in bulk GaInNAs layers

S. H. Hsu, Y. K. Su, S. J. Chang, R. W. Chuang, W. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga 0.85In0.15N0.011As0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.

Original languageEnglish
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
Pages861-862
Number of pages2
DOIs
Publication statusPublished - 2005
EventPacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 - Tokyo, Japan
Duration: 2005 Jul 112005 Jul 15

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume2005

Other

OtherPacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
CountryJapan
CityTokyo
Period05-07-1105-07-15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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