Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)

Albert Chin, M. F. Chang, S. H. Lin, W. B. Chen, P. T. Lee, F. S. Yeh, C. C. Liao, M. F. Li, N. C. Su, S. J. Wang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The unwanted high threshold voltage (Vt) is the major challenge for metal-gate/high-κ CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high Vt issue that is due to flat-band voltage (Vfb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the Vfb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-κ CMOSFETs using these methods have achieved low Vt and good control of Vfb roll-off at small 0.6-1.2 nm EOT. Crown

Original languageEnglish
Pages (from-to)1728-1732
Number of pages5
JournalMicroelectronic Engineering
Issue number7-9
Publication statusPublished - 2009 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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