Flat band voltage control on low V t metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)

Albert Chin, M. F. Chang, S. H. Lin, W. B. Chen, P. T. Lee, F. S. Yeh, C. C. Liao, M. F. Li, N. C. Su, Shui-Jinn Wang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The unwanted high threshold voltage (V t ) is the major challenge for metal-gate/high-κ CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high V t issue that is due to flat-band voltage (V fb ) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V fb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-κ CMOSFETs using these methods have achieved low V t and good control of V fb roll-off at small 0.6-1.2 nm EOT. Crown

Original languageEnglish
Pages (from-to)1728-1732
Number of pages5
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
Publication statusPublished - 2009 Jul 1

Fingerprint

Voltage control
Oxides
Metals
oxides
high voltages
Electric potential
electric potential
metals
Oxygen vacancies
Threshold voltage
threshold voltage
low voltage
CMOS
oxygen
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Chin, Albert ; Chang, M. F. ; Lin, S. H. ; Chen, W. B. ; Lee, P. T. ; Yeh, F. S. ; Liao, C. C. ; Li, M. F. ; Su, N. C. ; Wang, Shui-Jinn. / Flat band voltage control on low V t metal-gate/high-κ CMOSFETs with small EOT (Invited Paper) In: Microelectronic Engineering. 2009 ; Vol. 86, No. 7-9. pp. 1728-1732.
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author = "Albert Chin and Chang, {M. F.} and Lin, {S. H.} and Chen, {W. B.} and Lee, {P. T.} and Yeh, {F. S.} and Liao, {C. C.} and Li, {M. F.} and Su, {N. C.} and Shui-Jinn Wang",
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Chin, A, Chang, MF, Lin, SH, Chen, WB, Lee, PT, Yeh, FS, Liao, CC, Li, MF, Su, NC & Wang, S-J 2009, ' Flat band voltage control on low V t metal-gate/high-κ CMOSFETs with small EOT (Invited Paper) ', Microelectronic Engineering, vol. 86, no. 7-9, pp. 1728-1732. https://doi.org/10.1016/j.mee.2009.03.075

Flat band voltage control on low V t metal-gate/high-κ CMOSFETs with small EOT (Invited Paper) . / Chin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, C. C.; Li, M. F.; Su, N. C.; Wang, Shui-Jinn.

In: Microelectronic Engineering, Vol. 86, No. 7-9, 01.07.2009, p. 1728-1732.

Research output: Contribution to journalArticle

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AU - Chin, Albert

AU - Chang, M. F.

AU - Lin, S. H.

AU - Chen, W. B.

AU - Lee, P. T.

AU - Yeh, F. S.

AU - Liao, C. C.

AU - Li, M. F.

AU - Su, N. C.

AU - Wang, Shui-Jinn

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AB - The unwanted high threshold voltage (V t ) is the major challenge for metal-gate/high-κ CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high V t issue that is due to flat-band voltage (V fb ) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V fb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-κ CMOSFETs using these methods have achieved low V t and good control of V fb roll-off at small 0.6-1.2 nm EOT. Crown

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