Flexible and transparent memory: Non-volatile memory based on graphene channel transistor for flexible and transparent electronics applications

Sung Min Kim, Emil B. Song, Sejoon Lee, Jinfeng Zhou, Sunae Seo, David H. Seo, Kang L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A Flexible and Transparent charge trap Memory (FTM) based on a single-layer graphene (SLG) channel with a ITO gate electrode was fabricated on a flexible and transparent poly-ethylene naphtalate (PEN) substrate. Triple high-k dielectric stacks Al2O3- AlOx-Al2O3 (AAA) were used as a data storage layer. The FTM shows memory characteristics with a memory window larger than 7V while maintaining ∼80% of its transparency in the visible wavelength. The adoption of an AAA gate stack effectively suppressed the electron back injection from the gate electrode. This can be utilized for transparent and flexible electronics that require integration of logic, memory and display on a single flexible substrate with high transparency.

Original languageEnglish
Title of host publication2012 4th IEEE International Memory Workshop, IMW 2012
DOIs
Publication statusPublished - 2012
Event2012 4th IEEE International Memory Workshop, IMW 2012 - Milano, Italy
Duration: 2012 May 202012 May 23

Publication series

Name2012 4th IEEE International Memory Workshop, IMW 2012

Conference

Conference2012 4th IEEE International Memory Workshop, IMW 2012
CountryItaly
CityMilano
Period12-05-2012-05-23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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