Flexible ferroelectric element based on van der Waals heteroepitaxy

Jie Jiang, Yugandhar Bitla, Chun Wei Huang, Thi Hien Do, Heng Jui Liu, Ying Hui Hsieh, Chun Hao Ma, Chi Yuan Jang, Yu Hong Lai, Po Wen Chiu, Wen Wei Wu, Yi Chun Chen, Yi Chun Zhou, Ying Hao Chu

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next- generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.

Original languageEnglish
Article numbere1700121
JournalScience Advances
Volume3
Issue number6
DOIs
Publication statusPublished - 2017 Jun

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Equipment Design
Equipment and Supplies
Robotics
Hot Temperature
Technology
Delivery of Health Care
mica
lead titanate

All Science Journal Classification (ASJC) codes

  • General

Cite this

Jiang, J., Bitla, Y., Huang, C. W., Do, T. H., Liu, H. J., Hsieh, Y. H., ... Chu, Y. H. (2017). Flexible ferroelectric element based on van der Waals heteroepitaxy. Science Advances, 3(6), [e1700121]. https://doi.org/10.1126/sciadv.1700121
Jiang, Jie ; Bitla, Yugandhar ; Huang, Chun Wei ; Do, Thi Hien ; Liu, Heng Jui ; Hsieh, Ying Hui ; Ma, Chun Hao ; Jang, Chi Yuan ; Lai, Yu Hong ; Chiu, Po Wen ; Wu, Wen Wei ; Chen, Yi Chun ; Zhou, Yi Chun ; Chu, Ying Hao. / Flexible ferroelectric element based on van der Waals heteroepitaxy. In: Science Advances. 2017 ; Vol. 3, No. 6.
@article{3531df3014c64f92aafa34e4f070484f,
title = "Flexible ferroelectric element based on van der Waals heteroepitaxy",
abstract = "We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next- generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.",
author = "Jie Jiang and Yugandhar Bitla and Huang, {Chun Wei} and Do, {Thi Hien} and Liu, {Heng Jui} and Hsieh, {Ying Hui} and Ma, {Chun Hao} and Jang, {Chi Yuan} and Lai, {Yu Hong} and Chiu, {Po Wen} and Wu, {Wen Wei} and Chen, {Yi Chun} and Zhou, {Yi Chun} and Chu, {Ying Hao}",
year = "2017",
month = "6",
doi = "10.1126/sciadv.1700121",
language = "English",
volume = "3",
journal = "Science advances",
issn = "2375-2548",
publisher = "American Association for the Advancement of Science",
number = "6",

}

Jiang, J, Bitla, Y, Huang, CW, Do, TH, Liu, HJ, Hsieh, YH, Ma, CH, Jang, CY, Lai, YH, Chiu, PW, Wu, WW, Chen, YC, Zhou, YC & Chu, YH 2017, 'Flexible ferroelectric element based on van der Waals heteroepitaxy', Science Advances, vol. 3, no. 6, e1700121. https://doi.org/10.1126/sciadv.1700121

Flexible ferroelectric element based on van der Waals heteroepitaxy. / Jiang, Jie; Bitla, Yugandhar; Huang, Chun Wei; Do, Thi Hien; Liu, Heng Jui; Hsieh, Ying Hui; Ma, Chun Hao; Jang, Chi Yuan; Lai, Yu Hong; Chiu, Po Wen; Wu, Wen Wei; Chen, Yi Chun; Zhou, Yi Chun; Chu, Ying Hao.

In: Science Advances, Vol. 3, No. 6, e1700121, 06.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Flexible ferroelectric element based on van der Waals heteroepitaxy

AU - Jiang, Jie

AU - Bitla, Yugandhar

AU - Huang, Chun Wei

AU - Do, Thi Hien

AU - Liu, Heng Jui

AU - Hsieh, Ying Hui

AU - Ma, Chun Hao

AU - Jang, Chi Yuan

AU - Lai, Yu Hong

AU - Chiu, Po Wen

AU - Wu, Wen Wei

AU - Chen, Yi Chun

AU - Zhou, Yi Chun

AU - Chu, Ying Hao

PY - 2017/6

Y1 - 2017/6

N2 - We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next- generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.

AB - We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next- generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.

UR - http://www.scopus.com/inward/record.url?scp=85024487940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85024487940&partnerID=8YFLogxK

U2 - 10.1126/sciadv.1700121

DO - 10.1126/sciadv.1700121

M3 - Article

C2 - 28630922

AN - SCOPUS:85024487940

VL - 3

JO - Science advances

JF - Science advances

SN - 2375-2548

IS - 6

M1 - e1700121

ER -

Jiang J, Bitla Y, Huang CW, Do TH, Liu HJ, Hsieh YH et al. Flexible ferroelectric element based on van der Waals heteroepitaxy. Science Advances. 2017 Jun;3(6). e1700121. https://doi.org/10.1126/sciadv.1700121