Flicker noise in GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors

A. Balandin, S. Cai, R. Li, K. L. Wang, V. Ramgopal Rao, C. R. Viswanathan

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57 Citations (Scopus)


We have investigated noise characteristics of novel GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various gate bias VGS and the drain voltage VDS varying from the linear to the saturation regions of operation VDS > 5 V. Our results show that flicker, e.g., 1/f noise, is the dominant limiting noise of these devices; and the Hooge parameter is on the order of 10-5 - 10-4. The gate votage dependence of 1/f noise was observed in the linear region for all examined VGS and in the saturation region for VGS > 0. These results indicating low values of the Hooge parameter are important for microwave applications.

Original languageEnglish
Pages (from-to)475-477
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
Publication statusPublished - 1998 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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