We have investigated noise characteristics of novel GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various gate bias VGS and the drain voltage VDS varying from the linear to the saturation regions of operation VDS > 5 V. Our results show that flicker, e.g., 1/f noise, is the dominant limiting noise of these devices; and the Hooge parameter is on the order of 10-5 - 10-4. The gate votage dependence of 1/f noise was observed in the linear region for all examined VGS and in the saturation region for VGS > 0. These results indicating low values of the Hooge parameter are important for microwave applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering