AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with gate insulators grown using the photoelectrochemical oxidation method were fabricated in this work. The pinch-off voltage, maximum extrinsic transconductance, and drain-source saturation current at VGS =0 V were -9 V, 88.20 mS/mm, and 665 mA/mm, respectively. When the MOS-HEMTs operated at VGS =-20 and 20 V, the gate leakage current was only 31 and 960 nA, respectively. The normalized noise power spectra of MOS-HEMTs operated in the linear region and the saturation region were fitted well by 1/ f γ law from 4 Hz to 10 kHz. The exponent γ values were all closed to unity and independent of VGS. In the linear region (VDS =2 V) at VGS =-8 V and VGS =2 V, the αch and αs estimated at a frequency of 100 Hz were 8.69× 10-6 and 9.29× 10-5, respectively. The αch and αs estimated in the saturation region (VDS =10 V) at VGS =-8 V and VGS =2 V at a frequency of 100 Hz were 1.61× 10-4 and 2.08× 10 -3, respectively. The normalized noise power density was a function of VG -1, VG -3, and V G0 corresponded to the three regions of VG ≤ 3 V (VGS≤ -6 V), 3 V ≤ VG ≤ 9 V (-6 V ≤ VGS ≤ 0 V), and VG≥ 9 V (VGS ≥ 0 V), respectively, where VG was the effective gate bias defined as (V GS - Voff).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Materials Chemistry