Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors

T. K. Ko, S. C. Shei, Shoou-Jinn Chang, Y. K. Su, Y. Z. Chiou, Yu-Cheng Lin, C. S. Chang, W. S. Chen, C. K. Wang, Jinn-Kong Sheu, Wei-Chi Lai

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Flip-chip p(GaN)-i(GaN)-n(AlGaN) photosensors with extremely low dark currents were fabricated and characterized. It was found that the sensor with a 0.5-μm-thick Si-doped n +-Al 0.15Ga 0.85N layer could only detect optical signals with wavelength in between 325 and 360 nm. With an incident wavelength of 355 nm, the authors achieved a peak responsivity of 0.16 A/W at zero bias, which corresponds to an external quantum efficiency of 56%.

Original languageEnglish
Article number1661579
Pages (from-to)964-968
Number of pages5
JournalIEEE Sensors Journal
Issue number4
Publication statusPublished - 2006 Aug

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering


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