Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors

T. K. Ko; S. C. Shei; Shoou-Jinn Chang; Y. K. Su; Y. Z. Chiou; Yu-Cheng Lin; C. S. Chang; W. S. Chen; C. K. Wang; Jinn-Kong Sheu; Wei-Chi Lai

doi:10.1109/JSEN.2006.878000

Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors

T. K. Ko, S. C. Shei, Shoou-Jinn Chang, Y. K. Su, Y. Z. Chiou, Yu-Cheng Lin, C. S. Chang, W. S. Chen, C. K. Wang, Jinn-Kong Sheu, Wei-Chi Lai

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Flip-chip p(GaN)-i(GaN)-n(AlGaN) photosensors with extremely low dark currents were fabricated and characterized. It was found that the sensor with a 0.5-μm-thick Si-doped n ⁺-Al _0.15Ga _0.85N layer could only detect optical signals with wavelength in between 325 and 360 nm. With an incident wavelength of 355 nm, the authors achieved a peak responsivity of 0.16 A/W at zero bias, which corresponds to an external quantum efficiency of 56%.

Original language	English
Article number	1661579
Pages (from-to)	964-968
Number of pages	5
Journal	IEEE Sensors Journal
Volume	6
Issue number	4
DOIs	https://doi.org/10.1109/JSEN.2006.878000
Publication status	Published - 2006 Aug

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2006.878000

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@article{8726cfd507e94a119aa5e580296a0e87,

title = "Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors",

abstract = "Flip-chip p(GaN)-i(GaN)-n(AlGaN) photosensors with extremely low dark currents were fabricated and characterized. It was found that the sensor with a 0.5-μm-thick Si-doped n +-Al 0.15Ga 0.85N layer could only detect optical signals with wavelength in between 325 and 360 nm. With an incident wavelength of 355 nm, the authors achieved a peak responsivity of 0.16 A/W at zero bias, which corresponds to an external quantum efficiency of 56%.",

author = "Ko, {T. K.} and Shei, {S. C.} and Shoou-Jinn Chang and Su, {Y. K.} and Chiou, {Y. Z.} and Yu-Cheng Lin and Chang, {C. S.} and Chen, {W. S.} and Wang, {C. K.} and Jinn-Kong Sheu and Wei-Chi Lai",

note = "Funding Information: Manuscript received June 12, 2005; revised September 4, 2005. This work was supported by the National Science Council under Contract number NSC-89-2215-E-006-095. The associate editor coordinating the review of this paper and approving it for publication was Prof. Eugenii Katz.",

year = "2006",

month = aug,

doi = "10.1109/JSEN.2006.878000",

language = "English",

volume = "6",

pages = "964--968",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors

AU - Ko, T. K.

AU - Shei, S. C.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Chiou, Y. Z.

AU - Lin, Yu-Cheng

AU - Chang, C. S.

AU - Chen, W. S.

AU - Wang, C. K.

AU - Sheu, Jinn-Kong

AU - Lai, Wei-Chi

N1 - Funding Information: Manuscript received June 12, 2005; revised September 4, 2005. This work was supported by the National Science Council under Contract number NSC-89-2215-E-006-095. The associate editor coordinating the review of this paper and approving it for publication was Prof. Eugenii Katz.

PY - 2006/8

Y1 - 2006/8

N2 - Flip-chip p(GaN)-i(GaN)-n(AlGaN) photosensors with extremely low dark currents were fabricated and characterized. It was found that the sensor with a 0.5-μm-thick Si-doped n +-Al 0.15Ga 0.85N layer could only detect optical signals with wavelength in between 325 and 360 nm. With an incident wavelength of 355 nm, the authors achieved a peak responsivity of 0.16 A/W at zero bias, which corresponds to an external quantum efficiency of 56%.

AB - Flip-chip p(GaN)-i(GaN)-n(AlGaN) photosensors with extremely low dark currents were fabricated and characterized. It was found that the sensor with a 0.5-μm-thick Si-doped n +-Al 0.15Ga 0.85N layer could only detect optical signals with wavelength in between 325 and 360 nm. With an incident wavelength of 355 nm, the authors achieved a peak responsivity of 0.16 A/W at zero bias, which corresponds to an external quantum efficiency of 56%.

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U2 - 10.1109/JSEN.2006.878000

DO - 10.1109/JSEN.2006.878000

M3 - Article

AN - SCOPUS:33746913943

SN - 1530-437X

VL - 6

SP - 964

EP - 968

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 4

M1 - 1661579

ER -

Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors

Abstract

All Science Journal Classification (ASJC) codes

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