Flip-chip p(GaN)-i(GaN)-n(AlGaN) photosensors with extremely low dark currents were fabricated and characterized. It was found that the sensor with a 0.5-μm-thick Si-doped n +-Al 0.15Ga 0.85N layer could only detect optical signals with wavelength in between 325 and 360 nm. With an incident wavelength of 355 nm, the authors achieved a peak responsivity of 0.16 A/W at zero bias, which corresponds to an external quantum efficiency of 56%.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering