Fluorinated HfO2 gate dielectrics engineering for CMOS by pre-and post-CF4 plasma passivation

Woei Cherng Wu, Chao Sung Lai, Shih Ching Lee, Ma Ming-Wen, Tien Sheng Chao, Jer Chyi Wang, Chih Wei Hsu, Pai Chi Chou, Jian Hao Chen, Kuo Hsing Kao, Wen Cheng Lo, Tsung Yi Lu, Li Lin Tay, Nelson Rowell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In this paper, we demonstrate TaN/Fluorinated HfO2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08-12-1508-12-17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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