This study of the effects of fluorine addition to silicon oxycarbide dielectric barrier was prepared by using Si F4, 4MS, and C O2 as precursors, then reacting in the plasma enhanced chemical vapor deposition system. The addition of fluorine into silicon oxycarbide results in a 50% reduction of effective oxide charges compared with the fluorine-free silicon oxycarbide films. It also improves the dielectric constant, leakage current and breakdown voltage of the bulk film.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering