Fluorine-doped carbide dielectric barrier to improve copper interconnect line-to-line voltage breakdown

C. C. Huang, J. L. Huang, Y. L. Wang, S. C. Chang

Research output: Contribution to journalArticlepeer-review

Abstract

This study of the effects of fluorine addition to silicon oxycarbide dielectric barrier was prepared by using Si F4, 4MS, and C O2 as precursors, then reacting in the plasma enhanced chemical vapor deposition system. The addition of fluorine into silicon oxycarbide results in a 50% reduction of effective oxide charges compared with the fluorine-free silicon oxycarbide films. It also improves the dielectric constant, leakage current and breakdown voltage of the bulk film.

Original languageEnglish
Pages (from-to)G8-G10
JournalElectrochemical and Solid-State Letters
Volume10
Issue number3
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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