Fluorine-modified low-k a-SiOC:H composite films prepared by plasma enhanced chemical vapor deposition

Shiuh Ko JangJean, Chuan-Pu Liu, Ying Lang Wang, Weng Sing Hwang, Wei Tsu Tseng, Sheng Wen Chen, Kuang-Yao Lo

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

In situ fluorine-modified organosilicate glass (OSG, F-SiOC:H) composite thin films and OSG (SiOC:H) thin films were deposited on p-type (100) substrates at various temperatures (200-400°C) by the plasma enhanced chemical vapor deposition method using tetrafluorosilane (SiF4) with trimethelysilane (3MS) and oxygen as precursors. Fluorine content in the composite films was adjusted by varying the SiF4/3MS gas flow ratio of 0.5-2. The films were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The composition analysis and water contact angle measurements suggest that the surface of the films is defluorinated progressively with increasing deposition temperature. The absorbance spectrum of Fourier transform infrared spectroscopy shows that the frequency of the Si-O stretching vibration mode in the F-SiOC:H film shifts to a lower wave number (red shift) at higher temperature, and that shifts to a higher wave number (blue shift) with increasing amount of fluorine incorporation. Meanwhile, the refractive index of the F-SiOC:H films increases slightly with increasing fluorine content, and decreases with increasing deposition temperature. Although the film density increases with deposition temperature and fluorine content, the dielectric constant of the F-SiOC:H remains in the range between 2.8 and 3.2, which is still slightly lower than that of the OSG films (k=2.9-3.3). The F-SiOC:H films deposited at higher temperatures contain higher fluorine content as well as higher mechanical hardness and higher dielectric breakdown voltage. Higher mechanical strength of the F-SiOC:H films relative to that of the OSG films is realized by the structural change associated with fluorine incorporation.

Original languageEnglish
Pages (from-to)674-680
Number of pages7
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

Fluorine
Composite films
Plasma enhanced chemical vapor deposition
fluorine
vapor deposition
composite materials
Electric breakdown
Temperature
Hardness
hardness
Thin films
temperature
Angle measurement
shift
Refraction
Surface structure
Leakage currents
thin films
Stretching
Contact angle

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

JangJean, Shiuh Ko ; Liu, Chuan-Pu ; Wang, Ying Lang ; Hwang, Weng Sing ; Tseng, Wei Tsu ; Chen, Sheng Wen ; Lo, Kuang-Yao. / Fluorine-modified low-k a-SiOC:H composite films prepared by plasma enhanced chemical vapor deposition. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 674-680.
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title = "Fluorine-modified low-k a-SiOC:H composite films prepared by plasma enhanced chemical vapor deposition",
abstract = "In situ fluorine-modified organosilicate glass (OSG, F-SiOC:H) composite thin films and OSG (SiOC:H) thin films were deposited on p-type (100) substrates at various temperatures (200-400°C) by the plasma enhanced chemical vapor deposition method using tetrafluorosilane (SiF4) with trimethelysilane (3MS) and oxygen as precursors. Fluorine content in the composite films was adjusted by varying the SiF4/3MS gas flow ratio of 0.5-2. The films were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The composition analysis and water contact angle measurements suggest that the surface of the films is defluorinated progressively with increasing deposition temperature. The absorbance spectrum of Fourier transform infrared spectroscopy shows that the frequency of the Si-O stretching vibration mode in the F-SiOC:H film shifts to a lower wave number (red shift) at higher temperature, and that shifts to a higher wave number (blue shift) with increasing amount of fluorine incorporation. Meanwhile, the refractive index of the F-SiOC:H films increases slightly with increasing fluorine content, and decreases with increasing deposition temperature. Although the film density increases with deposition temperature and fluorine content, the dielectric constant of the F-SiOC:H remains in the range between 2.8 and 3.2, which is still slightly lower than that of the OSG films (k=2.9-3.3). The F-SiOC:H films deposited at higher temperatures contain higher fluorine content as well as higher mechanical hardness and higher dielectric breakdown voltage. Higher mechanical strength of the F-SiOC:H films relative to that of the OSG films is realized by the structural change associated with fluorine incorporation.",
author = "JangJean, {Shiuh Ko} and Chuan-Pu Liu and Wang, {Ying Lang} and Hwang, {Weng Sing} and Tseng, {Wei Tsu} and Chen, {Sheng Wen} and Kuang-Yao Lo",
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Fluorine-modified low-k a-SiOC:H composite films prepared by plasma enhanced chemical vapor deposition. / JangJean, Shiuh Ko; Liu, Chuan-Pu; Wang, Ying Lang; Hwang, Weng Sing; Tseng, Wei Tsu; Chen, Sheng Wen; Lo, Kuang-Yao.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 674-680.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Fluorine-modified low-k a-SiOC:H composite films prepared by plasma enhanced chemical vapor deposition

AU - JangJean, Shiuh Ko

AU - Liu, Chuan-Pu

AU - Wang, Ying Lang

AU - Hwang, Weng Sing

AU - Tseng, Wei Tsu

AU - Chen, Sheng Wen

AU - Lo, Kuang-Yao

PY - 2004/1/30

Y1 - 2004/1/30

N2 - In situ fluorine-modified organosilicate glass (OSG, F-SiOC:H) composite thin films and OSG (SiOC:H) thin films were deposited on p-type (100) substrates at various temperatures (200-400°C) by the plasma enhanced chemical vapor deposition method using tetrafluorosilane (SiF4) with trimethelysilane (3MS) and oxygen as precursors. Fluorine content in the composite films was adjusted by varying the SiF4/3MS gas flow ratio of 0.5-2. The films were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The composition analysis and water contact angle measurements suggest that the surface of the films is defluorinated progressively with increasing deposition temperature. The absorbance spectrum of Fourier transform infrared spectroscopy shows that the frequency of the Si-O stretching vibration mode in the F-SiOC:H film shifts to a lower wave number (red shift) at higher temperature, and that shifts to a higher wave number (blue shift) with increasing amount of fluorine incorporation. Meanwhile, the refractive index of the F-SiOC:H films increases slightly with increasing fluorine content, and decreases with increasing deposition temperature. Although the film density increases with deposition temperature and fluorine content, the dielectric constant of the F-SiOC:H remains in the range between 2.8 and 3.2, which is still slightly lower than that of the OSG films (k=2.9-3.3). The F-SiOC:H films deposited at higher temperatures contain higher fluorine content as well as higher mechanical hardness and higher dielectric breakdown voltage. Higher mechanical strength of the F-SiOC:H films relative to that of the OSG films is realized by the structural change associated with fluorine incorporation.

AB - In situ fluorine-modified organosilicate glass (OSG, F-SiOC:H) composite thin films and OSG (SiOC:H) thin films were deposited on p-type (100) substrates at various temperatures (200-400°C) by the plasma enhanced chemical vapor deposition method using tetrafluorosilane (SiF4) with trimethelysilane (3MS) and oxygen as precursors. Fluorine content in the composite films was adjusted by varying the SiF4/3MS gas flow ratio of 0.5-2. The films were investigated by examining the bonding configuration, index of refraction, surface composition, hardness, leakage current density and breakdown field strength. The composition analysis and water contact angle measurements suggest that the surface of the films is defluorinated progressively with increasing deposition temperature. The absorbance spectrum of Fourier transform infrared spectroscopy shows that the frequency of the Si-O stretching vibration mode in the F-SiOC:H film shifts to a lower wave number (red shift) at higher temperature, and that shifts to a higher wave number (blue shift) with increasing amount of fluorine incorporation. Meanwhile, the refractive index of the F-SiOC:H films increases slightly with increasing fluorine content, and decreases with increasing deposition temperature. Although the film density increases with deposition temperature and fluorine content, the dielectric constant of the F-SiOC:H remains in the range between 2.8 and 3.2, which is still slightly lower than that of the OSG films (k=2.9-3.3). The F-SiOC:H films deposited at higher temperatures contain higher fluorine content as well as higher mechanical hardness and higher dielectric breakdown voltage. Higher mechanical strength of the F-SiOC:H films relative to that of the OSG films is realized by the structural change associated with fluorine incorporation.

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